High cell density trench P channel MOSFET HUASHUO HSCE2631 designed for power management solutions
Key Attributes
Model Number:
HSCE2631
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
331pF
Number:
1 P-Channel
Output Capacitance(Coss):
509pF
Input Capacitance(Ciss):
4.4nF
Pd - Power Dissipation:
83W
Gate Charge(Qg):
76nC@4.5V
Mfr. Part #:
HSCE2631
Package:
DFN-8(3.3x3.3)
Product Description
Product Overview
The HSCE2631 is a P-channel, 20V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and availability as a green device.Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSCE2631 | Drain-Source Voltage (VDS) | -20 | V | |||
| Gate-Source Voltage (VGS) | 12 | V | ||||
| Continuous Drain Current (ID@TC=25) | VGS @ -4.5V | -50 | A | |||
| Continuous Drain Current (ID@TC=70) | VGS @ -4.5V | -39 | A | |||
| Pulsed Drain Current (IDM) | -200 | A | ||||
| Total Power Dissipation (PD@TC=25) | 83 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | 55 | /W | ||||
| Thermal Resistance Junction-Ambient (RJA) (t 10s) | 20 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | 1.5 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -20 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V , ID=-20A | 3.6 | 5 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-2.5V , ID=-20A | 4.7 | 6.5 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-1.8V , ID=-20A | 6.4 | 8.5 | m | ||
| Electrical Characteristics | Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -0.35 | -0.5 | -1.0 | V |
| Drain-Source Leakage Current (IDSS) | VDS=-20V , VGS=0V , TJ=25 | -1 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=8V , VDS=0V | 100 | nA | |||
| Gate Resistance (Rg) | VDS=-0V , VGS=0V, f=1MHz | 5 | ||||
| Total Gate Charge (Qg) | VDS=-15V , VGS=-4.5V , ID=-20A | 76 | nC | |||
| Gate-Source Charge (Qgs) | 9.1 | nC | ||||
| Gate-Drain Charge (Qgd) | 14 | nC | ||||
| Turn-On Delay Time (Td(on)) | VDD=-10V , VGS=-4.5V , RG=3.3, ID=-20A | 12 | ns | |||
| Rise Time (Tr) | 11 | ns | ||||
| Turn-Off Delay Time (Td(off)) | 56 | ns | ||||
| Fall Time (Tf) | 16 | ns | ||||
| Capacitance | Input Capacitance (Ciss) | VDS=-10V , VGS=0V , f=1MHz | 4400 | pF | ||
| Output Capacitance (Coss) | 509 | pF | ||||
| Reverse Transfer Capacitance (Crss) | 331 | pF | ||||
| Diode Characteristics | Continuous Source Current (IS) | VG=VD=0V , Force Current | -50 | A | ||
| Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | |||
| Reverse Recovery Time (trr) | IF=-20A , dI/dt=100A/s , TJ =25 | 55 | ns | |||
| Reverse Recovery Charge (Qrr) | 365 | nC |
2410121637_HUASHUO-HSCE2631_C2828499.pdf
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