HYG022N10NS1TA MOSFET Featuring 100 Volt Drain Source Voltage and 2.2 Milliohm Typical On Resistance
Key Attributes
Model Number:
HYG022N10NS1TA
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
249A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
-
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
186.6pF
Number:
1 N-channel
Output Capacitance(Coss):
3.51nF
Pd - Power Dissipation:
312W
Input Capacitance(Ciss):
9.026nF
Gate Charge(Qg):
160.5nC@10V
Mfr. Part #:
HYG022N10NS1TA
Package:
TOLL
Product Description
Product Overview
The HYG022N10NS1TA is an N-Channel Enhancement Mode MOSFET from Hymexa, designed for switching applications and power management in inverter and battery management systems. It features a high voltage rating of 100V and a continuous drain current of 249A, with a low on-state resistance of 2.2 m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available (RoHS Compliant).
Product Attributes
- Brand: Hymexa
- Model: HYG022N10NS1TA
- Certifications: RoHS Compliant, Halogen-Free Available
- Package Type: TOLL
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | - | - | 100 | V |
| Gate-Source Voltage | VGSS | - | - | ±20 | V | |
| Junction Temperature Range | TJ | - | -55 | - | 175 | °C |
| Storage Temperature Range | TSTG | - | -55 | - | 175 | °C |
| Source Current-Continuous(Body Diode) | IS | Tc=25C, Mounted on Large Heat Sink | - | - | 249 | A |
| Pulsed Drain Current | IDM | Tc=25C | - | - | 710 | A |
| Continuous Drain Current | ID | Tc=25C | - | - | 249 | A |
| Continuous Drain Current | ID | Tc=100C | - | - | 176 | A |
| Maximum Power Dissipation | PD | Tc=25C | - | - | 312 | W |
| Maximum Power Dissipation | PD | Tc=100C | - | - | 156 | W |
| Thermal Resistance, Junction-to-Case | RθJC | - | - | 0.48 | °C/W | |
| Thermal Resistance, Junction-to-Ambient | RθJA | Surface mounted on 1in² FR-4 board | - | 45 | °C/W | |
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, Limited by TJ max , starting TJ=25°C, L = 0.3mH, RG= 2.5Ω, VGS =10V | - | 1337 | mJ | |
| Electrical Characteristics (Tc =25°C Unless Otherwise Noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS= 250µA | 100 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=100V,VGS=0V | - | - | 1 | µA |
| Drain-to-Source Leakage Current | IDSS | TJ=125°C | - | - | 50 | µA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS= 250µA | 2 | 3.1 | 4 | V |
| Gate-Source Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS= 10V,IDS=50A | - | 2.2 | 2.8 | mΩ |
| Diode Forward Voltage | VSD | ISD=50A,VGS=0V | - | 0.83 | 1.3 | V |
| Reverse Recovery Time | trr | ISD=50A,dISD/dt=100A/µs | - | 93.3 | - | ns |
| Reverse Recovery Charge | Qrr | - | - | 239 | - | nC |
| Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | - | 2.3 | - | Ω |
| Input Capacitance | Ciss | VGS=0V, VDS= 25V, Frequency=1MHz | - | 9026 | - | pF |
| Output Capacitance | Coss | - | - | 3510 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 186.6 | - | pF |
| Turn-on Delay Time | td(ON) | VDD= 50V,RG=2.5Ω, IDS= 50A,VGS= 10V | - | 27 | - | ns |
| Turn-on Rise Time | Tr | - | - | 101 | - | ns |
| Turn-off Delay Time | td(OFF) | - | - | 91 | - | ns |
| Turn-off Fall Time | Tf | - | - | 99 | - | ns |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS =80V, VGS=10V,IDS=50A (VGS=10V) | - | 160.5 | - | nC |
| Gate-Source Charge | Qgs | - | - | 51 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 44 | - | nC |
2409302203_HUAYI-HYG022N10NS1TA_C2925050.pdf
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