650V N Channel MOSFET HUAKE SMF8N65 featuring low Crss and avalanche energy for switching power supplies
Key Attributes
Model Number:
SMF8N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.1Ω@10V,4A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
16pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.4nF@25V
Pd - Power Dissipation:
51W
Mfr. Part #:
SMF8N65
Package:
TO-220F
Product Description
Product Overview
The SMF8N65 is a 650V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It offers excellent performance with low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability.
Product Attributes
- Brand: HUAKE semiconductors
- Product Code: SMF8N65
- Date: 2017.08
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 650 | V | |||
| ID | Drain Current - Continuous | (TC=25℃) | 8.0* | A | ||
| (TC=100℃) | 5.1* | A | ||||
| IDM | Drain Current - Pulsed (Note1) | 32* | A | |||
| VGSS | Gate-Source Voltage | ±30 | V | |||
| EAS | Single Pulsed Avalanche Energy (Note2) | 600 | mJ | |||
| IAR | Avalanche Current (Note1) | 8.0 | A | |||
| EAR | Repetitive Avalanche Energy (Note1) | 15.0 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note3) | 4.5 | V/ns | |||
| PD | Power Dissipation | (TC =25℃) | 51 | W | ||
| -Derate above 25℃ | 0.41 | W/℃C | ||||
| Tj | Operating Junction Temperature | 150 | ℃C | |||
| Tstg | Storage Temperature Range | -55 | +150 | ℃C | ||
| Thermal Characteristics | ||||||
| RθJC | Thermal Resistance, Junction to Case | 2.44 | ℃/W | |||
| RθJA | Thermal Resistance, Junction to Ambient | 62.5 | ℃/W | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-source Breakdown Voltage | VGS=0V ,ID=250μA | 650 | V | ||
| ΔBVDSS /ΔTJ | Breakdown Voltage Temperature Coefficient | ID=250μA (Referenced to 25℃) | 0.7 | V/℃C | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=650V,VGS=0V | 1 | μA | ||
| VDS=520V,TC=125℃ | 10 | μA | ||||
| IGSSF | Gate-Body Leakage Current,Forward | VGS=+30V, VDS=0V | 100 | nA | ||
| IGSSR | Gate-Body Leakage Current,Reverse | VGS=-30V, VDS=0V | -100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250μA | 2.0 | 4.0 | V | |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10 V, ID=4.0A | 1.1 | 1.3 | Ω | |
| gFS | Forward Transconductance | VDS=40 V, ID=4.0A (Note4) | 7 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25V,VGS=0V, f=1.0MHz | 1400 | pF | ||
| Coss | Output Capacitance | 175 | pF | |||
| Crss | Reverse Transfer Capacitance | 16 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 325 V, ID = 8.0 A, RG = 25 Ω (Note4,5) | 13.5 | ns | ||
| tr | Turn-On Rise Time | 105 | ns | |||
| td(off) | Turn-Off Delay Time | 128 | ns | |||
| tf | Turn-Off Fall Time | 49 | ns | |||
| Qg | Total Gate Charge | VDS = 520 V, ID =8.0 A, VGS = 10 V (Note4,5) | 31 | nC | ||
| Qgs | Gate-Source Charge | 6.5 | nC | |||
| Qgd | Gate-Drain Charge | 14.7 | nC | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | 8.0 | A | |||
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | 32 | A | |||
| VSD | Drain-Source Diode Forward Voltage | VGS =0V,IS=8.0A | 1.4 | V | ||
| trr | Reverse Recovery Time | VGS =0V, IS=8.0A, d IF/dt=100A/μs (Note4) | 325 | ns | ||
| Qrr | Reverse Recovery Charge | 2.7 | μC | |||
2410122013_HUAKE-SMF8N65_C563585.pdf
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