Fast switching p channel mosfet huashuo hss6107 60 volt with green device compliance and low gate charge
Key Attributes
Model Number:
HSS6107
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
1.7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
180mΩ@4.5V,1A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
38pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
531pF@15V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
4.6nC@4.5V
Mfr. Part #:
HSS6107
Package:
SOT-23L
Product Description
Product Overview
The HSS6107 is a P-channel 60V fast-switching MOSFET featuring high cell density trenched technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This product meets RoHS and Green Product requirements and is available as a Green Device. Key advantages include 100% EAS Guaranteed, super low gate charge, and excellent Cdv/dt effect decline.Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Switching Speed: Fast Switching
- Certifications: RoHS, Green Product
- Availability: Green Device Available
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | -60 | V | ||
| VGS | Gate-Source Voltage | ±20 | V | ||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V | -1.7 | A | ||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V | -1.4 | A | ||
| IDM | Pulsed Drain Current | -7 | A | ||
| PD@TA=25 | Total Power Dissipation | 1 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | ||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||
| RJA | Thermal Resistance Junction-Ambient | 125 | /W | ||
| RJC | Thermal Resistance Junction-Case | 80 | /W | ||
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V, ID=-250µA) | -60 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient (Ref. to 25, ID=-1mA) | -0.021 | V/ | ||
| RDS(ON),max | Static Drain-Source On-Resistance (VGS=-10V, ID=-1.5A) | 180 | mΩ | ||
| RDS(ON),max | Static Drain-Source On-Resistance (VGS=-4.5V, ID=-1A) | 266 | mΩ | ||
| VGS(th) | Gate Threshold Voltage (VGS=VDS, ID =-250µA) | -1.0 | -2.5 | V | |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | 4.08 | mV/ | ||
| IDSS | Drain-Source Leakage Current (VDS=-48V, VGS=0V, TJ=25) | 1 | µA | ||
| IDSS | Drain-Source Leakage Current (VDS=-48V, VGS=0V, TJ=55) | 5 | µA | ||
| IGSS | Gate-Source Leakage Current (VGS=±20V, VDS=0V) | ±100 | nA | ||
| gfs | Forward Transconductance (VDS=-5V, ID=-1.5A) | 5.9 | S | ||
| Qg | Total Gate Charge (-4.5V) (VDS=-20V, VGS=-4.5V, ID=-1.5A) | 4.6 | nC | ||
| Qgs | Gate-Source Charge | 1.4 | nC | ||
| Qgd | Gate-Drain Charge | 1.62 | nC | ||
| Td(on) | Turn-On Delay Time (VDS=-15V, VGS=-10V, RG=3.3Ω, ID=-1A) | 17.4 | ns | ||
| Tr | Rise Time | 5.4 | ns | ||
| Td(off) | Turn-Off Delay Time | 37.2 | ns | ||
| Tf | Fall Time | 2.4 | ns | ||
| Ciss | Input Capacitance (VDS=-15V, VGS=0V, f=1MHz) | 531 | pF | ||
| Coss | Output Capacitance | 59 | pF | ||
| Crss | Reverse Transfer Capacitance | 38 | pF | ||
| IS | Continuous Source Current (VG=VD=0V, Force Current) | -1.7 | A | ||
| ISM | Pulsed Source Current | -7 | A | ||
| VSD | Diode Forward Voltage (VGS=0V, IS=-1A, TJ=25) | -1.2 | V | ||
| Part Number | HSS6107 | ||||
| Package | SOT-23L | ||||
| Packaging | 3000/Tape&Reel |
2409291036_HUASHUO-HSS6107_C508450.pdf
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