30 volt p channel mosfet HUASHUO HSU60P03 featuring low gate charge and excellent cdvdt effect for power supply circuits
Key Attributes
Model Number:
HSU60P03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.5mΩ@10V;11mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
421pF
Number:
1 P-Channel
Output Capacitance(Coss):
508pF
Input Capacitance(Ciss):
3.448nF
Pd - Power Dissipation:
52.1W
Gate Charge(Qg):
33nC@4.5V
Mfr. Part #:
HSU60P03
Package:
TO-252-2
Product Description
Product Overview
The HSU60P03 is a P-channel, 30V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This RoHS and Green Product compliant MOSFET is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Ch MOSFET
- Compliance: RoHS, Green Product
- Testing: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±25 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1 | -60 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1 | -35 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V1 | -17 | -11 | A | ||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V1 | -14 | -8.5 | A | ||
| IDM | Pulsed Drain Current2 | -160 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 145 | mJ | |||
| IAS | Avalanche Current | -30 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 52.1 | W | |||
| PD@TA=25 | Total Power Dissipation4 | 5 | 2 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | 62 | /W | |||
| RJA | Thermal Resistance Junction-Ambient1 (t ≤10s) | 25 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 2.4 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.018 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-30A | 7.5 | 10 | mΩ | |
| VGS=-4.5V , ID=-15A | 11 | 15 | V | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | 5.04 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | 1 | µA | ||
| VDS=-24V , VGS=0V , TJ=55 | 5 | µA | ||||
| IGSS | Gate-Source Leakage Current | VGS=±25V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-30A | 26.4 | S | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-15A | 33 | nC | ||
| Qgs | Gate-Source Charge | 10.7 | ||||
| Qgd | Gate-Drain Charge | 12.8 | ||||
| td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3Ω, ID=-15A | 8 | ns | ||
| tr | Rise Time | 17.8 | ||||
| td(off) | Turn-Off Delay Time | 78.4 | ||||
| tf | Fall Time | 43.6 | ||||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 3448 | pF | ||
| Coss | Output Capacitance | 508 | ||||
| Crss | Reverse Transfer Capacitance | 421 | ||||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | -60 | A | ||
| ISM | Pulsed Source Current2,5 | -160 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| trr | Reverse Recovery Time | IF=-15A , dI/dt=100A/µs , TJ=25 | 29 | nS | ||
| Qrr | Reverse Recovery Charge | 15 | nC | |||
Notes:
1 Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 Tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3 EAS data shows Max. rating. Test condition: VDD=-25V, VGS=-10V, L=0.1mH, IAS=-30A.
4 Power dissipation is limited by 150 junction temperature.
5 Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSU60P03 | TO252-2 | 2500/Tape&Reel |
2410121456_HUASHUO-HSU60P03_C845611.pdf
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