switching MOSFET HUASHUO HSS2N15 with super low gate charge and high cell density trench technology
Key Attributes
Model Number:
HSS2N15
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
1.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
300mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
840pF@75V
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
HSS2N15
Package:
SOT-23
Product Description
Product Overview
The HSS2N15 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and is available as a green device. Key advantages include super low gate charge and excellent Cdv/dt effect decline, achieved through advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Technology: N-Channel MOSFET
- Certifications: RoHS, Green Product
- Device Type: Fast Switching MOSFET
- Packaging: SOT-23L
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 150 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 1.8 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 1.4 | A | |||
| IDM | Pulsed Drain Current2 | 7.2 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.3 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | --- | 100 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 80 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 150 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=2A | 240 | 280 | m | |
| VGS=4.5V , ID=1A | 250 | 300 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 2 | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=150V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=150V , VGS=0V , TJ=125 | --- | 30 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| Qg | Total Gate Charge (10V) | VDS=75V , VGS=10V , ID=2A | 18 | --- | nC | |
| Qgs | Gate-Source Charge | 4.6 | --- | |||
| Qgd | Gate-Drain Charge | 5.7 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=75V , VGS=10V , RG=6 , ID=2A | 13 | --- | ns | |
| Tr | Rise Time | 19 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 26 | --- | ns | ||
| Tf | Fall Time | 9 | --- | ns | ||
| Ciss | Input Capacitance | VDS=75V , VGS=0V , f=1MHz | 840 | --- | pF | |
| Coss | Output Capacitance | 119 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 25 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | 1.8 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSS2N15 | SOT-23L | 3000/Tape&Reel | ||||
2409272232_HUASHUO-HSS2N15_C2987707.pdf
Related Products
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
