n channel mosfet HUASHUO HSP80N20 featuring fast switching and low rds on for power supply solutions
Key Attributes
Model Number:
HSP80N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
20mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
37pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
7.49nF@50V
Pd - Power Dissipation:
370W
Gate Charge(Qg):
115nC@10V
Mfr. Part #:
HSP80N20
Package:
TO-220
Product Description
Product Overview
The HSP80N20 is a high-performance N-channel Fast Switching MOSFET featuring an extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Model | HSP80N20 | |
| Channel Type | N-Ch | |
| Voltage Rating (VDS) | 200 | V |
| Current Rating (ID) | 80 | A |
| Switching Speed | Fast | |
| Storage Temperature Range | -55 to 150 | |
| Gate-Source Voltage (VGS) | 20 | V |
| RDS(ON) (Typical) | 32 | m |
| Gate Charge (Qg) (Typical) | 7490 | pC |
2411121146_HUASHUO-HSP80N20_C7543762.pdf
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