P Channel Enhancement Mode MOSFET HUAYI HY15P03C2 for High Frequency Buck Converters and Power Tools
Key Attributes
Model Number:
HY15P03C2
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-
RDS(on):
8.5mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
310pF
Number:
1 P-Channel
Output Capacitance(Coss):
506pF
Input Capacitance(Ciss):
4.287nF
Pd - Power Dissipation:
52W
Gate Charge(Qg):
90nC@10V
Mfr. Part #:
HY15P03C2
Package:
PPAK5x6-8L
Product Description
Product Overview
The HY15P03C2 is a single P-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters, networking DC-DC power systems, and power tool applications. It features low on-state resistance (RDS(ON)) of 4.8m typ. at VGS=-10V and 6.8m typ. at VGS=-4.5V, along with a reliable and rugged design. Halogen-free and RoHS compliant devices are available.
Product Attributes
- Brand: HUAYI
- Origin: China
- Material: Halogen Free (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | -30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Maximum Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Source Current-Continuous(Body Diode) | IS | Mounted on Large Heat Sink | -60 | A | ||
| Pulsed Drain Current | IDM | * | -240 | A | ||
| Continuous Drain Current | ID | -60 | -38 | A | ||
| Maximum Power Dissipation | PD | Tc=25C | 52 | 21 | W | |
| Thermal Resistance, Junction-to-Ambient | RJC | ** | 2.4 | C/W | ||
| Thermal Resistance, Junction-to-Ambient | RJA | *** | 35 | C/W | ||
| Single Pulsed-Avalanche Energy | EAS | L=0.1mH | 296.2 | mJ | ||
| Electrical Characteristics (Tc =25C Unless Otherwise Noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=-250A | -30 | V | ||
| Drain-to-Source Leakage Current | IDSS | VDS=-20V,VGS=0V | -1 | - | A | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=-250A | -1.0 | -1.6 | - | V |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Drain-Source On-State Resistance | RDS(ON)* | VGS=-10V,IDS=-20A | 4.8 | 6.0 | m | |
| Drain-Source On-State Resistance | RDS(ON)* | VGS=-4.5V,IDS=-20A | 6.8 | 8.5 | m | |
| Diode Forward Voltage | VSD* | ISD=-20A,VGS=0V, TJ=25C | -0.7 | -1.0 | V | |
| Reverse Recovery Time | trr | ISD=-20A,dISD/dt=100A/s | 29 | ns | ||
| Reverse Recovery Charge | Qrr | 54 | nC | |||
| Electrical Characteristics (Cont.) (Tc =25C Unless Otherwise Noted) | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 3.2 | |||
| Input Capacitance | Ciss | VGS=0V, VDS=-25V, Frequency=1.0MHz | 4287 | pF | ||
| Output Capacitance | Coss | 506 | pF | |||
| Reverse Transfer Capacitance | Crss | 310 | pF | |||
| Turn-on Delay Time | td(ON) | VDD=-15V,RG=2.5, IDS=-20A,VGS=-10V | 12 | ns | ||
| Turn-on Rise Time | Tr | 16 | ns | |||
| Turn-off Delay Time | td(OFF) | 75 | ns | |||
| Turn-off Fall Time | Tf | 37 | ns | |||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS =-24V, VGS=-10V ID=-20A | 90 | nC | ||
| Gate-Source Charge | Qgs | 7.5 | nC | |||
| Gate-Drain Charge | Qgd | 18 | nC | |||
2410121732_HUAYI-HY15P03C2_C123687.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
