p channel mosfet HUASHUO HSBA6117 featuring fast switching and low gate charge for power management solutions
Key Attributes
Model Number:
HSBA6117
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
14mΩ@4.5V,12A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
241pF@30V
Number:
1 P-Channel
Input Capacitance(Ciss):
4.635nF@30V
Pd - Power Dissipation:
90W
Gate Charge(Qg):
85nC@10V
Mfr. Part #:
HSBA6117
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA6117 is a P-channel, 60V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and features approved full function reliability. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Parameter | Rating | Units | Conditions | Min. | Typ. | Max. | |
|---|---|---|---|---|---|---|---|
| VDS Drain-Source Voltage | -60 | V | |||||
| VGS Gate-Source Voltage | 20 | V | |||||
| ID@TC=25 Continuous Drain Current, -VGS @ -10V1 | -60 | A | |||||
| ID@TC=100 Continuous Drain Current, -VGS @ -10V1 | -35 | A | |||||
| IDM Pulsed Drain Current2 | -170 | A | |||||
| EAS Single Pulse Avalanche Energy3 | 330 | mJ | |||||
| IAS Avalanche Current | 40 | A | |||||
| PD@TC=25 Total Power Dissipation4 | 90 | W | |||||
| TSTG Storage Temperature Range | -55 | 150 | |||||
| TJ Operating Junction Temperature Range | -55 | 150 | |||||
| RJA Thermal Resistance Junction-Ambient1 | --- | /W | 62 | ||||
| RJC Thermal Resistance Junction-Case1 | --- | /W | 1.3 | ||||
| BVDSS Drain-Source Breakdown Voltage | -60 | V | VGS=0V , ID=-250uA | ||||
| RDS(ON) Static Drain-Source On-Resistance2 | --- | m | VGS=-10V , ID=-18A | 14 | |||
| RDS(ON) Static Drain-Source On-Resistance2 | --- | m | VGS=-4.5V , ID=-12A | 17 | |||
| VGS(th) Gate Threshold Voltage | -1.0 | V | VGS=VDS , ID =-250uA | -2.5 | |||
| VGS(th) VGS(th) Temperature Coefficient | --- | mV/ | 4.28 | ||||
| IDSS Drain-Source Leakage Current | --- | uA | VDS=-48V , VGS=0V , TJ=25 | 1 | |||
| IDSS Drain-Source Leakage Current | --- | uA | VDS=-48V , VGS=0V , TJ=55 | 5 | |||
| IGSS Gate-Source Leakage Current | --- | nA | VGS=20V , VDS=0V | 100 | |||
| gfs Forward Transconductance | --- | S | VDS=-10V , ID=-18A | 43 | |||
| Rg Gate Resistance | --- | VDS=0V , VGS=0V , f=1MHz | 2.6 | ||||
| Qg Total Gate Charge | --- | nC | VDS=-30V , VGS=-10V , ID=-12A | 85 | |||
| Qgs Gate-Source Charge | --- | nC | 11 | ||||
| Qgd Gate-Drain Charge | --- | nC | 30 | ||||
| td(on) Turn-On Delay Time | --- | ns | VDD=-30V , VGS=-10V , RG=6, ID=-1A | 18 | |||
| tr Rise Time | --- | ns | 12 | ||||
| td(off) Turn-Off Delay Time | --- | ns | 100 | ||||
| tf Fall Time | --- | ns | 68 | ||||
| Ciss Input Capacitance | --- | pF | VDS=-30V , VGS=0V , f=1MHz | 4635 | |||
| Coss Output Capacitance | --- | pF | 524 | ||||
| Crss Reverse Transfer Capacitance | --- | pF | 241 | ||||
| IS Continuous Source Current1,5 | --- | A | VG=VD=0V , Force Current | -40 | |||
| VSD Diode Forward Voltage2 | --- | V | VGS=0V , IS=-1A , TJ=25 | -1.2 | |||
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
3. The EAS data shows Max. rating. The test condition is VDD=-30V, VGS=-10V, L=0.5mH, IAS=-40A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Ordering Information
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| HSBA6117 | PRPAK5*6 | Tape&Reel | 3000 |
2410121630_HUASHUO-HSBA6117_C5341692.pdf
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