Low Gate Charge 60V N Channel MOSFET HUASHUO HSBB6056 Fast Switching Suitable for Motor Control Systems
Key Attributes
Model Number:
HSBB6056
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
40pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
1.27nF@30V
Pd - Power Dissipation:
27.8W
Gate Charge(Qg):
15nC@4.5V
Mfr. Part #:
HSBB6056
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB6056 is a N-Channel 60V Fast Switching MOSFET designed with Advanced Trench MOS Technology. It offers low gate charge and low RDS(ON), making it suitable for applications such as Motor Control, DC/DC Converters, and Synchronous Rectifier applications. This device is 100% EAS Guaranteed and available in a Green Device option.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced Trench MOS
- EAS Guaranteed: 100%
- Availability: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current | 30 | A | |||
| ID@TC=100 | Continuous Drain Current | 27 | A | |||
| IDM | Pulsed Drain Current | 100 | A | |||
| EAS | Single Pulse Avalanche Energy | 26.5 | mJ | |||
| IAS | Avalanche Current | 23 | A | |||
| PD@TC=25 | Total Power Dissipation | 27.8 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 55 | /W | ||
| RJC | Thermal Resistance Junction-Case | (Note 1) | --- | 4.5 | /W | |
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=15A | 7 | 8.5 | m | |
| VGS=4.5V , ID=15A | 10.5 | 12.5 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | --- | 2.3 | V |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=48V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.3 | ||
| Qg | Total Gate Charge (4.5V) | VDS=30V , VGS=10V , ID=15A | 15 | --- | nC | |
| Qgs | Gate-Source Charge | 3.5 | --- | |||
| Qgd | Gate-Drain Charge | 4.2 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3, ID=15A | 7 | --- | ns | |
| Tr | Rise Time | 4.5 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 26 | --- | ns | ||
| Tf | Fall Time | 5 | --- | ns | ||
| Ciss | Input Capacitance | VDS=30V , VGS=0V , f=1MHz | 1270 | --- | pF | |
| Coss | Output Capacitance | 478 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 40 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current (Note 1,5) | --- | 30 | A | |
| ISM | Pulsed Source Current | (Note 2,5) | --- | 100 | A | |
| VSD | Diode Forward Voltage | VGS=0V , IS=A , TJ=25 (Note 2) | --- | 1.2 | V | |
| trr | Reverse Recovery Time | IF=15A , dI/dt=100A/s , TJ=25 (Note 2) | 22 | --- | ns | |
| Qrr | Reverse Recovery Charge | 72 | --- | nC | ||
Notes:
1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=23A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Ordering Information:
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBB6056 | PRPAK3*3 | 3000/Tape&Reel |
2410121656_HUASHUO-HSBB6056_C701038.pdf
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