40V P channel MOSFET HUASHUO HSBA4115 featuring super low gate charge and excellent CdVdt effect for power conversion
Key Attributes
Model Number:
HSBA4115
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
52A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
222pF
Number:
1 P-Channel
Output Capacitance(Coss):
323pF
Pd - Power Dissipation:
52.1W
Input Capacitance(Ciss):
3.5nF
Gate Charge(Qg):
27.9nC@4.5V
Mfr. Part #:
HSBA4115
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA4115 is a P-channel 40V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and availability as a green device. It is designed for high-performance power management solutions.Product Attributes
- Brand: HS-Semi
- Product Type: P-Ch MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| HSBA4115 | Drain-Source Voltage (VDS) | -40 | V | ||||
| Gate-Source Voltage (VGS) | 20 | V | |||||
| Continuous Drain Current (ID) | TC=25, VGS @ -10V | -52 | A | ||||
| Continuous Drain Current (ID) | TC=100, VGS @ -10V | -32 | A | ||||
| Pulsed Drain Current (IDM) | -105 | A | |||||
| Single Pulse Avalanche Energy (EAS) | 146 | mJ | |||||
| Avalanche Current (IAS) | -54 | A | |||||
| Total Power Dissipation (PD) | TC=25 | 52.1 | W | ||||
| Total Power Dissipation (PD) | TA=25 | 2 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | |||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 62 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | --- | 2.4 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -40 | V | ||||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-10V , ID=-18A | 10.5 | 13 | m | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V , ID=-12A | 15 | 20 | m | |||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.0 | -1.6 | -2.5 | V | ||
| Diode Characteristics | Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | -30 | A | ||
| Pulsed Source Current (ISM) | --- | -105 | A | ||||
| Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | --- | -1 | V | |||
| Capacitance | Input Capacitance (Ciss) | VDS=-15V , VGS=0V , f=1MHz | 3500 | pF | |||
| Output Capacitance (Coss) | 323 | pF | |||||
| Reverse Transfer Capacitance (Crss) | 222 | pF | |||||
| Switching Time | Turn-On Delay Time (td(on)) | VDD=-15V , VGS=-10V , RG=3.3, ID=-1A | 40 | ns | |||
| Rise Time (tr) | 35.2 | ns | |||||
| Turn-Off Delay Time (td(off)) | 100 | ns | |||||
| Fall Time (tf) | 9.6 | ns | |||||
| Ordering Information | Part Number | Package Code | Packaging | ||||
| HSBA4115 | PRPAK5*6 | 3000/Tape&Reel |
2410121455_HUASHUO-HSBA4115_C2903567.pdf
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