80V P channel MOSFET HUASHUO HSU8119 fast switching with high cell density trench technology and RoHS compliance
Key Attributes
Model Number:
HSU8119
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+150℃
RDS(on):
17mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 P-Channel
Output Capacitance(Coss):
390pF
Input Capacitance(Ciss):
13.3nF
Pd - Power Dissipation:
130W
Gate Charge(Qg):
190nC
Mfr. Part #:
HSU8119
Package:
TO-252-2L
Product Description
Product Overview
The HSU8119 is a P-channel, 80V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. This product meets RoHS and Green Product requirements, is 100% EAS guaranteed, and boasts full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS
- Product Type: P-Ch MOSFETs
- Voltage Rating: 80V
- Switching Speed: Fast Switching
- Technology: High Cell Density Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -80 | V | |||
| VGS | Gate-Source Voltage | ±20 | ±20 | V | ||
| ID@TC=25 | Continuous Drain Current, -VGS @ -10V1 | -70 | A | |||
| ID@TC=100 | Continuous Drain Current, -VGS @ -10V1 | -42 | A | |||
| IDM | Pulsed Drain Current2 | -270 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 710 | mJ | |||
| IAS | Avalanche Current | 63 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 130 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 1.2 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -80 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-20A | 13.5 | 15 | m | |
| VGS=-4.5V , ID=-10A | 14.5 | 17 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.8 | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-80V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=-80V , VGS=0V , TJ=55 | --- | 10 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | ±100 | nA | |
| Rg | Gate Resistance | VGS=0V, VDS=0V, f=1.0MHz | 1.7 | --- | ||
| gfs | Forward Transconductance | VDS=-10V , ID=-3A | 30 | --- | S | |
| Qg | Total Gate Charge | VDS=-40V , VGS=-10V , ID=-10A | 190 | --- | nC | |
| Qgs | Gate-Source Charge | 29 | --- | |||
| Qgd | Gate-Drain Charge | 55 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=-40V , VGS=-10V , RG=6, ID=-10A | 25 | --- | ns | |
| Tr | Rise Time | 20 | --- | |||
| Td(off) | Turn-Off Delay Time | 180 | --- | |||
| Tf | Fall Time | 88 | --- | |||
| Ciss | Input Capacitance | VDS=-40V , VGS=0V , f=1MHz | 13300 | --- | pF | |
| Coss | Output Capacitance | 390 | --- | |||
| Crss | Reverse Transfer Capacitance | 50 | --- | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | -70 | A | |
| ISM | Pulsed Source Current2,5 | --- | -270 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1.2 | V | |
| Trr | Reverse Recovery Time | IF=-20A, di/dt=100A/s | 35 | --- | ns | |
| Qrr | Reverse Recovery Charge | IF=-20A, di/dt=100A/s | 45 | --- | nC | |
2410122016_HUASHUO-HSU8119_C22359256.pdf
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