Single N Channel MOSFET HUAYI HY1503C1 with 30V Drain Source Voltage and Avalanche Tested Performance
Key Attributes
Model Number:
HY1503C1
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
34A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
70pF
Number:
1 N-channel
Output Capacitance(Coss):
150pF
Input Capacitance(Ciss):
680pF
Pd - Power Dissipation:
17.8W
Gate Charge(Qg):
14.6nC@10V
Mfr. Part #:
HY1503C1
Package:
DFN3x3-8L
Product Description
Product Overview
The HY1503C1 is a single N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers a 30V drain-source voltage and 34A continuous drain current with low on-resistance (RDS(ON)) of 7.1m at VGS=10V. This device is 100% avalanche tested, reliable, rugged, and available in halogen-free and green (RoHS compliant) options.
Product Attributes
- Brand: HY1503C1
- Origin: Xi'an Huayi Microelectronics Co., Ltd.
- Certifications: RoHS Compliant, Halogen Free
- Material: Lead-free (matte tin termination finish)
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 30 | V | |||
| VGSS | Gate-Source Voltage | 20 | V | |||
| TJ | Junction Temperature Range | -55 | 150 | C | ||
| TSTG | Storage Temperature Range | -55 | 150 | C | ||
| ID | Continuous Drain Current | Tc=25C | 34 | A | ||
| ID | Continuous Drain Current | Tc=100C | 21.6 | A | ||
| IDM | Pulsed Drain Current | Tc=25C | 120 | A | ||
| PD | Maximum Power Dissipation | Tc=25C | 17.8 | W | ||
| PD | Maximum Power Dissipation | Tc=100C | 7.1 | W | ||
| RJC | Thermal Resistance, Junction-to-Case | 7 | C/W | |||
| RJA | Thermal Resistance, Junction-to-Ambient | 75 | C/W | |||
| EAS | Single Pulsed-Avalanche Energy | L=0.1mH | 12 | mJ | ||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,IDS=250A | 30 | V | ||
| IDSS | Drain-to-Source Leakage Current | VDS=30V,VGS=0V | 1 | A | ||
| IDSS | Drain-to-Source Leakage Current | Tj=125C | 50 | A | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250A | 1 | 1.6 | 3 | V |
| IGSS | Gate-Source Leakage Current | VGS=20V,VDS=0V | 100 | nA | ||
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V,IDS=10A | 7.1 | 8.5 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V,IDS=10A | 10.0 | 12.5 | m | |
| VSD | Diode Forward Voltage | ISD=10A,VGS=0V | 0.7 | 1.0 | V | |
| trr | Reverse Recovery Time | ISD=10A,dISD/dt=100A/s | 15 | ns | ||
| Qrr | Reverse Recovery Charge | 35 | nC | |||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | 1.0 | |||
| Ciss | Input Capacitance | VGS=0V, VDS=15V, Frequency=1.0MHz | 680 | pF | ||
| Coss | Output Capacitance | 150 | pF | |||
| Crss | Reverse Transfer Capacitance | 70 | pF | |||
| td(ON) | Turn-on Delay Time | VDD=10V,RG=4, IDS=10A,VGS=10V | 4.8 | ns | ||
| Tr | Turn-on Rise Time | 12.5 | ns | |||
| td(OFF) | Turn-off Delay Time | 27.6 | ns | |||
| Tf | Turn-off Fall Time | 8.2 | ns | |||
| Qg | Total Gate Charge | VDS =24V, VGS=10V, ID=10A | 14.6 | nC | ||
| Qgs | Gate-Source Charge | 1.97 | nC | |||
| Qgd | Gate-Drain Charge | 3.75 | nC | |||
Package Information
| Package Type | Unit | Quantity |
| DFN3*3-8L | Reel | 3000 |
Package Dimensions
| SYMBOL | MILLIMETER | MIN | NOM | MAX |
| A | 0.70 | 0.75 | 0.80 | |
| A1 | 0.00 | 0.02 | 0.05 | |
| b | 0.25 | 0.30 | 0.35 | |
| b1 | 1.55 | 1.60 | 165.00 | |
| c | 0.19 | 0.20 | 0.21 | |
| D | 2.90 | 3.00 | 3.10 | |
| D2 | 2.30 | 2.40 | 2.50 | |
| Nd | 1.90 | 1.95 | 2.00 | |
| E | 2.90 | 3.00 | 3.10 | |
| E2 | 1.60 | 1.70 | 1.80 | |
| e | 0.65bsc | |||
| L | 0.35 | 0.40 | 0.45 | |
| h | 0.30 | 0.35 | 0.40 |
Classification Profile
| Profile Feature | Sn-Pb Eutectic Assembly | Pb-Free Assembly |
| Preheat & Soak Temperature min (Tsmin) | 100 C | 150 C |
| Temperature max (Tsmax) | 150 C | 200 C |
| Time (Tsmin to Tsmax) (ts) | 60-120 seconds | 60-120 seconds |
| Average ramp-up rate (Tsmaxto TP) | 3 C/second max. | 3C/second max. |
| Liquidous temperature (TL) | 183 C | 217 C |
| Time at liquidous (tL) | 60-150 seconds | 60-150 seconds |
| Peak package body Temperature (Tp)* | See Classification Temp in table 1 | See Classification Temp in table 2 |
| Time (tP)** within 5C of the specified classification temperature (Tc) | 20** seconds | 30** seconds |
| Average ramp-down rate (Tpto Tsmax) | 6 C/second max. | 6 C/second max. |
| Time 25C to peak temperature | 6 minutes max. | 8 minutes max. |
Table 1. SnPb Eutectic Process Classification Temperatures (Tc)
| Package Thickness | Volume mm <350 | Volume mm 350 <2.5 mm | Volume mm 2.5 mm |
| <1.6 mm | 235 C | 220 C | 220 C |
| 1.6 mm | 220 C | 220 C | 220 C |
Table 2. Pb-free Process Classification Temperatures (Tc)
| Package Thickness | Volume mm <350 | Volume mm 350-2000 | Volume mm 2000 |
| <1.6 mm | 260 C | 260 C | 260 C |
| 1.6 mm 2.5 mm | 260 C | 250 C | 245 C |
| 2.5 mm | 250 C | 245 C | 245 C |
Reliability Test Program
| Test item | Method | Description |
| SOLDERABILITY | JESD-22, B102 | 5 Sec, 245C |
| HTRB | JESD-22, A108 | 168/500/1000Hrs, Bias @ 150C |
| PCT | JESD-22, A102 | 96 Hrs, 100%RH, 2atm, 121C |
| TCT | JESD-22, A104 | 500 Cycles, -55C~150C |
2410121307_HUAYI-HY1503C1_C358109.pdf
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