Low static drain source on resistance N channel MOSFET HSM10N15A ideal for power management circuits
Key Attributes
Model Number:
HSM10N15A
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
35mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
4pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
1.19nF@75V
Pd - Power Dissipation:
2.7W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
HSM10N15A
Package:
SOP-8
Product Description
Product Overview
The HSM10N15A is a high-performance N-channel MOSFET featuring an extreme high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and it is available as a Green Device.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSM10N15A | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250uA | 150 | --- | --- | V |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V, ID=4A | --- | 35 | 56 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID =250uA | 2 | --- | 4 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=120V, VGS=0V, TJ=25 | --- | --- | 1 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=120V, VGS=0V, TJ=55 | --- | --- | 5 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V, VDS=0V | --- | --- | 100 | nA | |
| Forward Transconductance (gfs) | VDS=5V, ID=4A | --- | 25 | --- | S | |
| Total Gate Charge (Qg) | VDS=75V, VGS=10V, ID=4A | --- | 23 | --- | nC | |
| Gate-Source Charge (Qgs) | --- | 5.8 | --- | nC | ||
| Gate-Drain Charge (Qgd) | --- | 4.2 | --- | nC | ||
| Input Capacitance (Ciss) | VDS=75V, VGS=0V, f=1MHz | --- | 1190 | --- | pF | |
| Output Capacitance (Coss) | VDS=75V, VGS=0V, f=1MHz | --- | 73 | --- | pF | |
| Reverse Transfer Capacitance (Crss) | VDS=75V, VGS=0V, f=1MHz | --- | 4 | --- | pF | |
| Diode Forward Voltage (VSD) | VGS=0V, IS=1A, TJ=25 | --- | --- | 1.2 | V | |
| Reverse Recovery Time (trr) | IF=4A, dI/dt=100A/s, TJ=25 | --- | --- | 45 | nS | |
| Reverse Recovery Charge (Qrr) | IF=4A, dI/dt=100A/s, TJ=25 | --- | --- | 138 | nC | |
| Continuous Drain Current (ID) @TC=25 | VGS @ 10V | 1 | 10 | --- | A | |
| Continuous Drain Current (ID) @TC=100 | VGS @ 10V | 1 | 8 | --- | A | |
| Continuous Drain Current (ID) @TA=25 | VGS @ 10V | 1 | 5 | --- | A | |
| Continuous Drain Current (ID) @TA=70 | VGS @ 10V | 1 | 3.8 | --- | A | |
| Pulsed Drain Current (IDM) | 2 | 50 | --- | --- | A | |
| Total Power Dissipation (PD) @TA=25 | 3 | 2.7 | --- | --- | W | |
| Storage Temperature Range (TSTG) | -55 | --- | 150 | |||
| Operating Junction Temperature Range (TJ) | -55 | --- | 150 | |||
| Thermal Resistance Junction-ambient (RJA) | 1 | --- | 85 | --- | /W | |
| Thermal Resistance Junction-Case (RJC) | 1 | --- | 23 | --- | /W |
| Part Number | Package Code | Packaging |
|---|---|---|
| HSM10N15A | SOP-8 | 2500/Tape&Reel |
2410121642_HUASHUO-HSM10N15A_C7543686.pdf
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