fast switching P channel MOSFET HUASHUO HSU6115 with low RDS ON and high cell density trench design
Key Attributes
Model Number:
HSU6115
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
35A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
141pF@15V
Number:
1 P-Channel
Output Capacitance(Coss):
224pF
Input Capacitance(Ciss):
3.635nF@15V
Pd - Power Dissipation:
52.1W
Gate Charge(Qg):
25nC@4.5V
Mfr. Part #:
HSU6115
Package:
TO-252-2
Product Description
HSU6115 P-Ch 60V Fast Switching MOSFETs
Product Overview
The HSU6115 is a high cell density trenched P-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and gate charge characteristics, contributing to efficient power management. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Switching Speed: Fast Switching
- Technology: Trench Technology
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, -VGS @ -10V1 | -35 | A | |||
| ID@TC=100 | Continuous Drain Current, -VGS @ -10V1 | -27 | A | |||
| IDM | Pulsed Drain Current2 | -70 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 113 | mJ | |||
| IAS | Avalanche Current | 47.6 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 52.1 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | 1 | --- | 62 | /W | |
| RJC | Thermal Resistance Junction-Case | 1 | --- | 2.4 | /W | |
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | --- | --- | V |
| RDS(ON),max | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-18A | --- | 25 | m | |
| VGS=-4.5V , ID=-12A | --- | 33 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | --- | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25 | --- | 1 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=-10V , ID=-18A | 23 | --- | S | |
| Qg | Total Gate Charge (-4.5V) | VDS=-20V , VGS=-4.5V , ID=-12A | 25 | --- | nC | |
| td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3, ID=-1A | 38 | --- | ns | |
| tr | Rise Time | 23.6 | --- | ns | ||
| td(off) | Turn-Off Delay Time | 100 | --- | ns | ||
| tf | Fall Time | 6.8 | --- | ns | ||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 3635 | --- | pF | |
| Coss | Output Capacitance | 224 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 141 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | -35 | A | |
| ISM | Pulsed Source Current2,5 | --- | -70 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1 | V | |
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSU6115 | TO252-2 | 2500/Tape&Reel |
2410121455_HUASHUO-HSU6115_C508799.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
