Fast Switching N channel MOSFET HUASHUO HSBA6074 with 60V voltage rating and high cell density design
Key Attributes
Model Number:
HSBA6074
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.2mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
88pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
83W
Input Capacitance(Ciss):
5.48nF@30V
Gate Charge(Qg):
102nC@10V
Mfr. Part #:
HSBA6074
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA6074 is a high cell density N-channel 60V Fast Switching MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approved, making it suitable for motor control, DC/DC converters, and synchronous rectifier applications. Its design also provides excellent CdV/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- Guarantees: 100% EAS Guaranteed
- Reliability: Full function reliability approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSBA6074 | Drain-Source Voltage (VDS) | 60 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TC=25) | 100 | A | ||||
| Continuous Drain Current (ID@TC=100) | 66 | A | ||||
| Pulsed Drain Current (IDM) | 400 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 306 | mJ | ||||
| Avalanche Current (IAS) | 35 | A | ||||
| Total Power Dissipation (PD@TC=25) | 83 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 55 | /W | |||
| Thermal Resistance Junction-Case (RJC) | --- | 1.1 | /W | |||
| Static Drain-Source On-Resistance (RDS(ON),typ) | VGS=10V, ID=20A | 1.7 | 2.1 | m | ||
| Static Drain-Source On-Resistance (RDS(ON),typ) | VGS=4.5V, ID=20A | 2.3 | 3.2 | m | ||
| HSBA6074 | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250uA | 60 | --- | --- | V |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID=250uA | 1.2 | --- | 2.3 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=52V, VGS=0V, TJ=25 | --- | --- | 1 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V, VDS=0V | --- | --- | 100 | nA | |
| Forward Transconductance (gfs) | VDS=5V, ID=20A | --- | 60 | --- | S | |
| Gate Resistance (Rg) | VDS=0V, VGS=0V, f=1MHz | --- | 1.6 | --- | ||
| Total Gate Charge (Qg) | VDS=30V, VGS=10V, ID=20A | --- | 102 | --- | nC | |
| Gate-Source Charge (Qgs) | --- | 16 | --- | nC | ||
| Gate-Drain Charge (Qgd) | --- | 28 | --- | nC | ||
| Turn-On Delay Time (Td(on)) | VDD=30V, VGS=10V, RG=3, ID=20A | --- | 15 | --- | ns | |
| Rise Time (Tr) | --- | 12 | --- | ns | ||
| HSBA6074 | Turn-Off Delay Time (Td(off)) | --- | 60 | --- | ns | |
| Fall Time (Tf) | --- | 19 | --- | ns | ||
| Input Capacitance (Ciss) | VDS=30V, VGS=0V, f=1MHz | --- | 5480 | --- | pF | |
| Output Capacitance (Coss) | --- | 1822 | --- | pF | ||
| HSBA6074 | Reverse Transfer Capacitance (Crss) | --- | 88 | --- | pF | |
| HSBA6074 | Continuous Source Current (IS) | VG=VD=0V, Force Current | --- | --- | 100 | A |
| Diode Forward Voltage (VSD) | VGS=0V, IS=1A, TJ=25 | --- | --- | 1.2 | V | |
| Reverse Recovery Time (trr) | IF=20A, dI/dt=100A/s, TJ=25 | --- | 50 | --- | nS | |
| HSBA6074 | Reverse Recovery Charge (Qrr) | --- | 72 | --- | nC |
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBA6074 | PRPAK5*6 | 3000/Tape&Reel |
2410121447_HUASHUO-HSBA6074_C2903566.pdf
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