P channel MOSFET HUASHUO HSH4119 with high cell density trench technology and 100 percent EAS guaranteed
Key Attributes
Model Number:
HSH4119
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
660pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
10.7nF@20V
Pd - Power Dissipation:
200W
Gate Charge(Qg):
190nC@10V
Mfr. Part #:
HSH4119
Package:
TO-263
Product Description
Product Overview
The HSH4119 is a P-channel 40V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1,6 | -150 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1,6 | -103 | A | |||
| IDM | Pulsed Drain Current2 | -580 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 1250 | mJ | |||
| IAS | Avalanche Current | -70 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 200 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient 1(Steady State) | 62 | /W | |||
| RJC | Thermal Resistance Junction-case 1 | 0.95 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -40 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-30A | 3.9 | 4.5 | m | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-20A | 4.9 | 5.6 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | |
| IDSS | Drain-Source Leakage Current | VDS=-40V , VGS=0V , TJ=25 | -1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=-40V , VGS=0V , TJ=125 | -100 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| Rg | Gate resistance | VDS=0V , VGS=0V , f=1MHz | 1.7 | |||
| Qg | Total Gate Charge (-10V) | VDS=-20V , VGS=-10V , ID=-20A | 190 | nC | ||
| Qgs | Gate-Source Charge | 24 | nC | |||
| Qgd | Gate-Drain Charge | 38 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=-20V , VGS=-10V , RG=3, ID=-10A | 18 | ns | ||
| Tr | Rise Time | 3.6 | ns | |||
| Td(off) | Turn-Off Delay Time | 21 | ns | |||
| Tf | Fall Time | 39 | ns | |||
| Ciss | Input Capacitance | VDS=-20V , VGS=0V , f=1MHz | 10700 | pF | ||
| Coss | Output Capacitance | 780 | pF | |||
| Crss | Reverse Transfer Capacitance | 660 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | -150 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-20A , TJ=25 | -1.2 | V | ||
| trr | Reverse Recovery Time | IF=-20A , di/dt=100A/s , TJ=25 | 52 | nS | ||
| Qrr | Reverse Recovery Charge | 128 | nC | |||
Notes:
1. Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. Tested by pulsed, pulse width 300s, duty cycle 2%.
3. EAS data shows Max. rating. Test condition: VDD=-40V, VGS=-10V, L=0.5mH, IAS=-70A.
4. Power dissipation is limited by 150 junction temperature.
5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
6. Maximum current rating is package limited.
2410122016_HUASHUO-HSH4119_C22359319.pdf
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