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quality 40V P Channel MOSFET HUASHUO HSH4129 Featuring High Cell Density Trench Technology and Low Gate Charge factory
quality 40V P Channel MOSFET HUASHUO HSH4129 Featuring High Cell Density Trench Technology and Low Gate Charge factory
quality 40V P Channel MOSFET HUASHUO HSH4129 Featuring High Cell Density Trench Technology and Low Gate Charge factory
quality 40V P Channel MOSFET HUASHUO HSH4129 Featuring High Cell Density Trench Technology and Low Gate Charge factory

40V P Channel MOSFET HUASHUO HSH4129 Featuring High Cell Density Trench Technology and Low Gate Charge

Key Attributes
Model Number: HSH4129
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.36nF@20V
Number:
1 P-Channel
Pd - Power Dissipation:
200W
Input Capacitance(Ciss):
-
Gate Charge(Qg):
390nC@10V
Mfr. Part #:
HSH4129
Package:
TO-263
Product Description

Product Overview

The HSH4129 is a P-channel, 40V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

Product Attributes

  • Brand: HS-Semi
  • Product Type: P-Channel MOSFET
  • Voltage Rating: 40V
  • Switching Speed: Fast Switching
  • Technology: Advanced high cell density Trench technology
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed, Full function reliability approved

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage -40 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ -10V1,6 -180 A
ID@TC=100 Continuous Drain Current, VGS @ -10V1,6 -113 A
IDM Pulsed Drain Current2 -720 A
EAS Single Pulse Avalanche Energy3 1750 mJ
IAS Avalanche Current -100 A
PD@TC=25 Total Power Dissipation4 200 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-ambient 1(Steady State) 62 /W
RJC Thermal Resistance Junction-case 1 0.85 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -40 V
RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-30A 1.9 2.3 m
VGS=-4.5V , ID=-20A 2.5 3.0 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 -2.5 V
IDSS Drain-Source Leakage Current VDS=-40V , VGS=0V , TJ=25 -1 uA
VDS=-40V , VGS=0V , TJ=125 -100 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V 100 nA
Rg Gate resistance VDS=0V , VGS=0V , f=1MHz 1.7
Qg Total Gate Charge (-10V) VDS=-20V , VGS=-10V , ID=-20A 390 nC
Qgs Gate-Source Charge 48 nC
Qgd Gate-Drain Charge 76 nC
Td(on) Turn-On Delay Time VDD=-20V , VGS=-10V , RG=3, ID=-10A 18 ns
Tr Rise Time 3.6 ns
Td(off) Turn-Off Delay Time 21 ns
Tf Fall Time 39 ns
Capacitance Ciss Input Capacitance VDS=-20V , VGS=0V , f=1MHz 21300 pF
Coss Output Capacitance 1480 pF
Crss Reverse Transfer Capacitance 1360 pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current -180 A
VSD Diode Forward Voltage2 VGS=0V , IS=-20A , TJ=25 -1.2 V
Diode Recovery trr Reverse Recovery Time IF=-20A , di/dt=100A/s , TJ=25 52 nS
Qrr Reverse Recovery Charge 128 nC

2411061707_HUASHUO-HSH4129_C42376817.pdf
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