86--136 6733 2386
quality 200V fast switching MOSFET HUASHUO HSL3P20 P channel device with trench technology and low gate charge factory
quality 200V fast switching MOSFET HUASHUO HSL3P20 P channel device with trench technology and low gate charge factory

200V fast switching MOSFET HUASHUO HSL3P20 P channel device with trench technology and low gate charge

Key Attributes
Model Number: HSL3P20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF@100V
Number:
1 P-Channel
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
500pF@100V
Gate Charge(Qg):
8.5nC@4.5V
Mfr. Part #:
HSL3P20
Package:
SOT-223
Product Description

Product Overview

The HSL3P20 is a P-channel, 200V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and is available in a Green Device option. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.

Product Attributes

  • Brand: HSL
  • Type: P-Channel MOSFET
  • Technology: Trench
  • Certifications: RoHS, Green Product

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
VDS Drain-Source Voltage -200 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ -10V1 -3 A
ID@TC=70 Continuous Drain Current, VGS @ -10V1 -2 A
ID@TA=25 Continuous Drain Current, VGS @ -10V1 -0.9 A
ID@TA=70 Continuous Drain Current, VGS @ -10V1 -0.68 A
IDM Pulsed Drain Current2 -3.5 A
PD@TA=25 Total Power Dissipation3 1.5 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJA Thermal Resistance Junction-ambient 85 /W
RJC Thermal Resistance Junction-Case1 36 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -200 V
RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-0.5A 1.9 2.4
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -2.0 -3.0 -4.0 V
IDSS Drain-Source Leakage Current VDS=-160V , VGS=0V , TJ=25 1 uA
IDSS Drain-Source Leakage Current VDS=-160V , VGS=0V , TJ=55 10 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V 100 nA
gfs Forward Transconductance VDS=-5V , ID=-0.8A 0.5 S
Qg Total Gate Charge VDS=-100V , VGS=-4.5V , ID=-0.5A 8.5 nC
Qgs Gate-Source Charge 1.5
Qgd Gate-Drain Charge 1.8
Td(on) Turn-On Delay Time VDD=-100V , VGS=-10V , RG=6 ID=-0.5A 1.9 ns
Tr Rise Time 1.2 ns
Td(off) Turn-Off Delay Time 22 ns
Tf Fall Time 11 ns
Ciss Input Capacitance VDS=-100V , VGS=0V , f=1MHz 500 pF
Coss Output Capacitance 39 pF
Crss Reverse Transfer Capacitance 20 pF
IS Continuous Source Current1,4 VG=VD=0V , Force Current -1.2 A
ISM Pulsed Source Current2,4 -3.5 A
VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25 -1.3 V

Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.


2410122016_HUASHUO-HSL3P20_C22359225.pdf
Related Products
quality High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant factory
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
quality N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology factory
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
quality Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor factory
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
quality N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities factory
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.