Power Management N Channel MOSFET HUAYI HY1106S with Low RDS ON and RoHS Compliance in SOP 8 Package
Key Attributes
Model Number:
HY1106S
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-
RDS(on):
17mΩ@4.5V,8A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
142pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.286nF
Output Capacitance(Coss):
188pF
Pd - Power Dissipation:
3.5W
Gate Charge(Qg):
52.5nC@10V
Mfr. Part #:
HY1106S
Package:
SOP-8
Product Description
Product Overview
The HOOYI HY1106S is an N-Channel Enhancement Mode MOSFET designed for power management applications, particularly in DC/DC converters. It offers reliable and rugged performance with features like Avalanche Rating and Lead Free/Green Device availability, compliant with RoHS standards.
Product Attributes
- Brand: HOOYI
- Model: HY1106S
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
- Package Type: SOP-8
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Static Characteristics | BVDSS | VGS=0V, IDS=250A | - | - | 60 | V |
| IDSS | VDS=60V, VGS=0V; TJ=85C | - | - | 30 | A | |
| VGS(th) | VDS=VGS, IDS=250A | 1.0 | - | 3.0 | V | |
| Diode Characteristics | VSD | IS=11A, VGS=0V | - | 0.7 | 1.0 | V |
| trr | IS=11A, dlSD/dt=100A/s | - | - | - | ns | |
| On-state Resistance | RDS(ON) | VGS=10V, IDS=11A | - | 13.5 | - | m |
| RDS(ON) | VGS=4.5V, IDS=11A | - | 17 | - | m | |
| Dynamic Characteristics | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | - | - | pF |
| Coss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | - | - | pF | |
| Crss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | - | - | pF | |
| Gate Charge Characteristics | Qg | VDD=10V, RG=6 , IDS=11A | - | 6.4 | - | nC |
| Qgs | VDD=10V, RG=6 , IDS=11A | - | - | - | nC | |
| Qgd | VDD=10V, RG=6 , IDS=11A | - | - | 15.3 | nC | |
| td(ON) | VDD=10V, RG=6 , IDS=11A | - | 8 | - | ns | |
| td(OFF) | VDD=10V, RG=6 , IDS=11A | - | 27 | - | ns | |
| Absolute Maximum Ratings | VDSS | - | - | - | 60 | V |
| VGSS | - | -20 | - | +20 | V | |
| Continuous Drain Current | ID | TC=25C | - | - | 55 | A |
| ID | TC=70C | - | - | 44** | A | |
| Maximum Power Dissipation | PD | TC=25C | - | - | 3.5 | W |
| Thermal Resistance-Junction to Case | RJC | - | - | 43 | C/W | |
| Thermal Resistance-Junction to Ambient | RJA | - | - | 75 | C/W |
2410121706_HUAYI-HY1106S_C176659.pdf
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