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quality Single N Channel Enhancement Mode MOSFET HUAYI HY1603C2 with Avalanche Tested Reliability Features factory
quality Single N Channel Enhancement Mode MOSFET HUAYI HY1603C2 with Avalanche Tested Reliability Features factory

Single N Channel Enhancement Mode MOSFET HUAYI HY1603C2 with Avalanche Tested Reliability Features

Key Attributes
Model Number: HY1603C2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
88A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
158pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.312nF
Pd - Power Dissipation:
35.7W
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
HY1603C2
Package:
PPAK-8L(5x6)
Product Description

HY1603C2 Single N-Channel Enhancement Mode MOSFET

The HY1603C2 is a high-performance, single N-Channel enhancement mode MOSFET designed for various switching and power management applications. It offers low on-state resistance (RDS(ON)) of 4.1m (typ.) at VGS = 10V and 5.2m (typ.) at VGS = 4.5V, with a continuous drain current of 60A. This device is 100% avalanche tested, ensuring reliability and ruggedness. Halogen-free options are available.

Product Attributes

  • Brand: HUAYI
  • Origin: China
  • Material: Halogen-Free Devices Available (RoHS compliant)
  • Certifications: RoHS compliant

Technical Specifications

ParameterSymbolTest ConditionsMinTyp.MaxUnit
Absolute Maximum Ratings
Drain-Source VoltageVDSSTc=25C Unless Otherwise Noted--30V
Gate-Source VoltageVGSS--20V
Maximum Junction TemperatureTJ---150C
Storage Temperature RangeTSTG--55-150C
Source Current-Continuous (Body Diode)ISTc=25C, Mounted on Large Heat Sink--60A
Pulsed Drain CurrentIDMTc=25C--240A
Continuous Drain CurrentIDTc=25C--60A
Continuous Drain CurrentIDTc=100C--38A
Maximum Power DissipationPDTc=25C--35.7W
Maximum Power DissipationPDTc=100C--14.3W
Thermal Resistance, Junction-to-CaseRTJC--3.5C/W
Thermal Resistance, Junction-to-AmbientRTJASurface mounted on FR-4 board-35C/W
Single-Pulsed-Avalanche EnergyEASL=0.1mH, Limited by TJmax, starting TJ=25C, L = 0.1mH, RG =25., VGS =10V-105-mJ
Electrical Characteristics (Tc =25C Unless Otherwise Noted)
Drain-Source Breakdown VoltageBVDSSVGS=0V,IDS=250A30--V
Drain-to-Source Leakage CurrentIDSSVDS=30V,VGS=0V--1A
Drain-to-Source Leakage CurrentIDSSTJ=55C, VDS=30V,VGS=0V--5A
Gate Threshold VoltageVGS(th)VDS=VGS, IDS=250A11.33V
Gate-Source Leakage CurrentIGSSVGS=20V,VDS=0V--100nA
Drain-Source On-State ResistanceRDS(ON)VGS=10V,IDS=20A-4.15.0m
Drain-Source On-State ResistanceRDS(ON)VGS=4.5V,IDS=20A-5.26.5m
Diode Forward VoltageVSDISD=20A,VGS=0V-0.81.2V
Reverse Recovery TimetrrISD=20A,dISD/dt=100A/s-53-ns
Reverse Recovery ChargeQrrISD=20A,dISD/dt=100A/s-78-nC
Gate ResistanceRGVGS=0V,VDS=0V,F=1MHz-1.5-
Input CapacitanceCissVGS=0V, VDS=25V, Frequency=1.0MHz-2312-pF
Output CapacitanceCossVGS=0V, VDS=25V, Frequency=1.0MHz-358-pF
Reverse Transfer CapacitanceCrssVGS=0V, VDS=25V, Frequency=1.0MHz-158-pF
Turn-on Delay Timetd(ON)VDD=20V,RG=4, IDS=20A,VGS=10V-20-ns
Turn-on Rise TimeTrVDD=20V,RG=4, IDS=20A,VGS=10V-23-ns
Turn-off Delay Timetd(OFF)VDD=20V,RG=4, IDS=20A,VGS=10V-26-ns
Turn-off Fall TimeTfVDD=20V,RG=4, IDS=20A,VGS=10V-30-ns
Total Gate ChargeQgVDS =32V, VGS=10V, ID=20A-52-nC
Gate-Source ChargeQgsVDS =32V, VGS=10V, ID=20A-4.5-nC
Gate-Drain ChargeQgdVDS =32V, VGS=10V, ID=20A-10.3-nC

Applications

  • Switching Application
  • Power Management for DC/DC
  • Battery Protection

2410010403_HUAYI-HY1603C2_C2931347.pdf

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