High reliability trench P channel MOSFET HUASHUO HSBA90P02 optimized for power management solutions
Key Attributes
Model Number:
HSBA90P02
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.3nF@10V
Number:
1 P-Channel
Pd - Power Dissipation:
150W
Input Capacitance(Ciss):
10.211nF@10V
Gate Charge(Qg):
170nC@4.5V
Mfr. Part #:
HSBA90P02
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA90P02 is a P-channel MOSFET featuring high cell density trench technology, designed for excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device is RoHS and Green Product compliant, with 100% EAS guaranteed and full function reliability approval. Key benefits include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Technology: Trench
- Compliance: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1,6 | -90 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1,6 | -78 | A | |||
| IDM | Pulsed Drain Current2 | -530 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 370 | mJ | |||
| IAS | Avalanche Current | -40 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 150 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient 1(t≤10S) | --- | 18 | /W | ||
| RJA | Thermal Resistance Junction-ambient 1(Steady State) | --- | 60 | /W | ||
| RJC | Thermal Resistance Junction-case 1 | --- | 0.9 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-20A | 1.9 | 2.5 | mΩ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-2.5V , ID=-20A | 2.7 | 3.5 | mΩ | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.5 | --- | -1.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=-20V , VGS=0V , TJ=25 | --- | -1 | uA | |
| IDSS | Drain-Source Leakage Current | VDS=-20V , VGS=0V , TJ=55 | --- | -5 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | --- | ±100 | nA | |
| Qg | Total Gate Charge | VDS=-10V , VGS=-4.5V , ID=-20A | 170 | --- | nC | |
| Qgs | Gate-Source Charge | 2.2 | --- | |||
| Qgd | Gate-Drain Charge | 3.3 | --- | |||
| td(on) | Turn-On Delay Time | VDD=-20V , VGS=-10V , RG=3Ω, ID=-20A | 17 | --- | ns | |
| tr | Rise Time | 4.1 | --- | |||
| td(off) | Turn-Off Delay Time | 25 | --- | |||
| tf | Fall Time | 33 | --- | |||
| Ciss | Input Capacitance | VDS=-10V , VGS=0V , f=1MHz | 10211 | --- | pF | |
| Coss | Output Capacitance | 1280 | --- | |||
| Crss | Reverse Transfer Capacitance | 1300 | --- | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | -90 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-20A , TJ=25 | --- | -1.2 | V | |
| trr | Reverse Recovery Time | IF=-20A , di/dt=100A/µs , TJ=25 | --- | 68 | nS | |
| Qrr | Reverse Recovery Charge | --- | 49 | nC | ||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSBA90P02 | PRPAK5*6 | 3000/Tape&Reel | ||||
2410122016_HUASHUO-HSBA90P02_C22359240.pdf
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