Load Switch P Channel MOSFET HSS4P06 with 60V Drain Source Voltage and Low Gate Charge Performance
Key Attributes
Model Number:
HSS4P06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
4A
RDS(on):
90mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
63pF
Number:
1 P-Channel
Output Capacitance(Coss):
89pF
Input Capacitance(Ciss):
831pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
HSS4P06
Package:
SOT-23
Product Description
Product Overview
The HSS4P06 is a P-Channel 60V fast-switching MOSFET designed for high cell density and excellent RDS(ON) and efficiency. It is ideal for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and offers 100% EAS guaranteed, super low gate charge, and excellent Cdv/dt effect decline due to its advanced high cell density trench technology.
Product Attributes
- Brand: HSS (implied by "www.hs-semi.cn")
- Product Type: P-Channel MOSFET
- Certifications: RoHS, Green Product
- Key Features: 100% EAS Guaranteed, Super Low Gate Charge, Excellent Cdv/dt effect decline
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSS4P06 | Drain-Source Voltage (VDS) | -60 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID) | VGS @ -10V, TC=25 | -4 | A | |||
| Continuous Drain Current (ID) | VGS @ -10V, TC=70 | -3.5 | A | |||
| Pulsed Drain Current (IDM) | -16 | A | ||||
| Total Power Dissipation (PD) | TC=25 | 1.4 | W | |||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 100 | /W | |||
| Thermal Resistance Junction-Case (RJC) | --- | 62 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -60 | --- | --- | V | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-10V , ID=-4A | --- | 75 | 90 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V , ID=-3A | --- | 90 | 110 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=-60V , VGS=0V , TJ=25 | --- | --- | -1 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | --- | 100 | nA | |
| Total Gate Charge (Qg) | VDS=-30V , VGS=-10V , ID=-4A | --- | 20 | --- | nC | |
| Package | SOT-23L | |||||
| Packaging | 3000/Tape&Reel |
2410121531_HUASHUO-HSS4P06_C2987709.pdf
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