High Current MOSFET HUASHUO HSBA8066 with 80V Drain Source Voltage and Excellent Switching Performance
Key Attributes
Model Number:
HSBA8066
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
8.7mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
12pF@40V
Number:
1 N-channel
Input Capacitance(Ciss):
1.738nF@40V
Pd - Power Dissipation:
52W
Gate Charge(Qg):
29nC@10V
Mfr. Part #:
HSBA8066
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA8066 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring an 80V drain-source voltage rating, it is ideal for high-frequency switching, synchronous rectification, DC/DC converters, and motor driver applications. This MOSFET utilizes advanced high cell density Trench technology, offering super low gate charge and excellent CdV/dt effect decline. It is 100% EAS guaranteed and available in a Green Device option.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced high cell density Trench technology
- Certifications: Green Device Available
Technical Specifications
| Model | Parameter | Rating / Conditions | Units |
|---|---|---|---|
| HSBA8066 | Drain-Source Voltage (VDS) | 80 | V |
| Gate-Source Voltage (VGS) | 20 | V | |
| Continuous Drain Current (ID @ TC=25, VGS @ 10V) | 60 | A | |
| Continuous Drain Current (ID @ TC=100, VGS @ 10V) | 38 | A | |
| Pulsed Drain Current (IDM) | 200 | A | |
| Single Pulse Avalanche Energy (EAS) | 45 | mJ | |
| Avalanche Current (IAS) | 30 | A | |
| Total Power Dissipation (PD @ TC=25) | 52 | W | |
| Storage Temperature Range (TSTG) | -55 to 150 | ||
| Operating Junction Temperature Range (TJ) | -55 to 150 | ||
| Thermal Resistance Junction-Ambient (RJA) | 75 | /W | |
| Thermal Resistance Junction-Case (RJC) | 2.4 | /W | |
| Drain-Source Breakdown Voltage (BVDSS @ VGS=0V, ID=250uA) | 80 | V | |
| HSBA8066 | Static Drain-Source On-Resistance (RDS(ON), TYP @ VGS=10V, ID=10A) | 7.2 | m |
| Static Drain-Source On-Resistance (RDS(ON) @ VGS=4.5V, ID=10A) | 10.5 (Typ.) | m | |
| HSBA8066 | Gate Threshold Voltage (VGS(th) @ VGS=VDS, ID =250uA) | 1.2 to 2.3 | V |
| Drain-Source Leakage Current (IDSS @ VDS=64V, VGS=0V, TJ=25) | 1 (Max.) | uA | |
| Gate-Source Leakage Current (IGSS @ VGS=20V, VDS=0V) | 100 (Max.) | nA | |
| HSBA8066 | Total Gate Charge (Qg @ VDS=40V, VGS=10V, ID=10A) | 29 | nC |
| Gate-Source Charge (Qgs) | 7.7 (Typ.) | nC | |
| Gate-Drain Charge (Qgd) | 5.3 (Typ.) | nC | |
| Input Capacitance (Ciss @ VDS=40V, VGS=0V, f=1MHz) | 1738 (Typ.) | pF | |
| Output Capacitance (Coss @ VDS=40V, VGS=0V, f=1MHz) | 317 (Typ.) | pF | |
| HSBA8066 | Continuous Source Current (IS @ VG=VD=0V) | 30 | A |
| Diode Forward Voltage (VSD @ VGS=0V, IS=A, TJ=25) | 1.2 (Max.) | V | |
| HSBA8066 | Reverse Recovery Time (trr @ IF=10A, dI/dt=100A/s, TJ=25) | 35 (Typ.) | nS |
| HSBA8066 | Reverse Recovery Charge (Qrr @ IF=10A, dI/dt=100A/s, TJ=25) | 62 (Typ.) | nC |
Applications
- High Frequency Switching
- Synchronous Rectification
- DC/DC Converters
- Motor Drivers
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBA8066 | PRPAK5*6 | 3000/Tape&Reel |
2410121448_HUASHUO-HSBA8066_C701052.pdf
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