N Channel MOSFET HUASHUO HSBA6066 Featuring Low Gate Charge and Green Device Option for Power Circuits
Key Attributes
Model Number:
HSBA6066
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
78A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
438pF
Input Capacitance(Ciss):
1.67nF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
33nC@10V
Mfr. Part #:
HSBA6066
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA6066 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring advanced Trench MOS Technology, it offers low gate charge and low RDS(ON), making it ideal for demanding power management tasks. This device is 100% EAS guaranteed and available in a Green Device option. Key applications include motor control, DC/DC converters, and synchronous rectifier circuits.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced Trench MOS Technology
- Device Type: N-Channel MOSFET
- Availability: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current1 | 78 | A | |||
| ID@TC=100 | Continuous Drain Current1 | 57 | A | |||
| IDM | Pulsed Drain Current2 | 210 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 93 | mJ | |||
| IAS | Avalanche Current | 43 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 75 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 55 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 1.8 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=30A | 4.4 | 5.2 | m | |
| VGS=4.5V , ID=20A | 6.4 | 7.8 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.65 | 2.3 | V |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=48V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.3 | --- | ||
| Qg | Total Gate Charge (4.5V) | VDS=30V , VGS=10V , ID=20A | 33 | --- | nC | |
| Qgs | Gate-Source Charge | 18 | --- | nC | ||
| Qgd | Gate-Drain Charge | 6 | --- | nC | ||
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3, ID=20A | 7.5 | --- | ns | |
| Tr | Rise Time | 6 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 29 | --- | ns | ||
| Tf | Fall Time | 7.5 | --- | ns | ||
| Ciss | Input Capacitance | VDS=30V , VGS=0V , f=1MHz | 1670 | --- | pF | |
| Coss | Output Capacitance | 438 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 25 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 78 | A | |
| ISM | Pulsed Source Current2,5 | --- | 210 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=A , TJ=25 | --- | 1.2 | V | |
| trr | Reverse Recovery Time | IF=15A , dI/dt=100A/s , TJ=25 | --- | 23 | nS | |
| Qrr | Reverse Recovery Charge | --- | 60 | nC | ||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSBA6066 | PRPAK5*6 | 3000/Tape&Reel | ||||
Notes:
1. Tested on a surface-mounted 1 inch2 FR-4 board with 2OZ copper.
2. Tested by pulsed, pulse width 300s, duty cycle 2%.
3. EAS data shows Max. rating. Test condition: VDD=25V, VGS=10V, L=0.1mH, IAS=43A.
4. Power dissipation is limited by 150 junction temperature.
5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2410121653_HUASHUO-HSBA6066_C2828501.pdf
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