60V Fast Switching N Channel MOSFET Power Transistor HUASHUO HSBA6048 for Synchronous Buck Converter
Key Attributes
Model Number:
HSBA6048
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
85A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.6mΩ@4.5V,15A
Gate Threshold Voltage (Vgs(th)):
2.3V
Reverse Transfer Capacitance (Crss@Vds):
22pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
3.458nF@30V
Pd - Power Dissipation:
83W
Gate Charge(Qg):
58nC@10V
Mfr. Part #:
HSBA6048
Package:
PRPAK5x6-8L
Product Description
HSBA6048 N-Ch 60V Fast Switching MOSFETs
Product Overview
The HSBA6048 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. It features super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Voltage Rating: 60V
- Switching Speed: Fast Switching
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current | 1,6 | 85 | A | ||
| ID@TC=100 | Continuous Drain Current | 1,6 | 66 | A | ||
| IDM | Pulsed Drain Current | 2 | 240 | A | ||
| EAS | Single Pulse Avalanche Energy | 3 | 101 | mJ | ||
| IAS | Avalanche Current | 45 | A | |||
| PD@TC=25 | Total Power Dissipation | 4 | 83 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | 55 | /W | |||
| RJC | Thermal Resistance Junction-Case | 1 | 1.5 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | V | ||
| RDS(ON),max | Static Drain-Source On-Resistance | 2 | 3.6 | m | ||
| VGS=10V , ID=20A | 3.0 | 3.6 | m | |||
| VGS=4.5V , ID=15A | 4.4 | 5.4 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 2.3 | V | |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=48V , VGS=0V , TJ=55 | 5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | VDS=5V , ID=20A | 65 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 0.7 | |||
| Qg | Total Gate Charge | VDS=30V , VGS=10V , ID=20A | 58 | nC | ||
| Qgs | Gate-Source Charge | 16 | nC | |||
| Qgd | Gate-Drain Charge | 4 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3, ID=20A | 18 | ns | ||
| Tr | Rise Time | 8 | ns | |||
| Td(off) | Turn-Off Delay Time | 50 | ns | |||
| Tf | Fall Time | 10.5 | ns | |||
| Ciss | Input Capacitance | VDS=30V , VGS=0V , f=1MHz | 3458 | pF | ||
| Coss | Output Capacitance | 1522 | pF | |||
| Crss | Reverse Transfer Capacitance | 22 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | 55 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| trr | Reverse Recovery Time | IF=20A , dI/dt=100A/s , TJ=25 | 24 | ns | ||
| Qrr | Reverse Recovery Charge | 85 | nC | |||
2409291134_HUASHUO-HSBA6048_C508828.pdf
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