Switching and Power Management MOSFET HYG064N08NA1B N Channel Enhancement Mode with 6.4 Milliohm RDS

Key Attributes
Model Number: HYG064N08NA1B
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
205pF
Number:
1 N-channel
Output Capacitance(Coss):
460pF
Input Capacitance(Ciss):
3.08nF
Pd - Power Dissipation:
208W
Gate Charge(Qg):
65nC@10V
Mfr. Part #:
HYG064N08NA1B
Package:
TO-263-2
Product Description

Product Overview

The HYG064N08NA1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It features high performance with a low RDS(ON) of 6.4m (typ.) at VGS = 10V, 100% avalanche tested, and a reliable, rugged design. Lead-free and green devices are available, compliant with RoHS standards.

Product Attributes

  • Brand: HYM (Huayi Microelectronics)
  • Origin: China
  • Certifications: RoHS Compliant, Halogen Free

Technical Specifications

Part NumberPackageVDS (V)ID (A)RDS(ON) (m)Application
HYG064N08NA1P/BTO-220FB-3L / TO-263-2L80120 (Tc=25C)6.4 (typ. @VGS=10V)Switching application, Power management for inverter system
ParameterTest ConditionsMinTyp.MaxUnit
Drain-Source Breakdown Voltage (BVDSS)VGS=0V, IDS= 250A80--V
Gate Threshold Voltage (VGS(th))VDS=VGS, IDS= 250A234V
Drain-Source On-State Resistance (RDS(ON))VGS= 10V, IDS= 40A-6.47.5m
Diode Forward Voltage (VSD)ISD=40A,VGS=0V-0.831V
Total Gate Charge (Qg)VDS =64V, VGS= 10V, IDS= 20A-65-nC
Input Capacitance (Ciss)VGS=0V, VDS= 25V, F=1.0MHz-3080-pF
Output Capacitance (Coss)VGS=0V, VDS= 25V, F=1.0MHz-460-pF
Reverse Transfer Capacitance (Crss)VGS=0V, VDS= 25V, F=1.0MHz-205-pF

2410121912_HUAYI-HYG064N08NA1B_C2830426.pdf

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