Switching and Power Management MOSFET HYG064N08NA1B N Channel Enhancement Mode with 6.4 Milliohm RDS
Product Overview
The HYG064N08NA1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It features high performance with a low RDS(ON) of 6.4m (typ.) at VGS = 10V, 100% avalanche tested, and a reliable, rugged design. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HYM (Huayi Microelectronics)
- Origin: China
- Certifications: RoHS Compliant, Halogen Free
Technical Specifications
| Part Number | Package | VDS (V) | ID (A) | RDS(ON) (m) | Application |
| HYG064N08NA1P/B | TO-220FB-3L / TO-263-2L | 80 | 120 (Tc=25C) | 6.4 (typ. @VGS=10V) | Switching application, Power management for inverter system |
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS= 250A | 80 | - | - | V |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS= 250A | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance (RDS(ON)) | VGS= 10V, IDS= 40A | - | 6.4 | 7.5 | m |
| Diode Forward Voltage (VSD) | ISD=40A,VGS=0V | - | 0.83 | 1 | V |
| Total Gate Charge (Qg) | VDS =64V, VGS= 10V, IDS= 20A | - | 65 | - | nC |
| Input Capacitance (Ciss) | VGS=0V, VDS= 25V, F=1.0MHz | - | 3080 | - | pF |
| Output Capacitance (Coss) | VGS=0V, VDS= 25V, F=1.0MHz | - | 460 | - | pF |
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS= 25V, F=1.0MHz | - | 205 | - | pF |
2410121912_HUAYI-HYG064N08NA1B_C2830426.pdf
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