Fast switching trench technology p channel mosfet huashuo ao3407a suitable for power switching needs

Key Attributes
Model Number: AO3407A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
95pF
Number:
1 P-Channel
Output Capacitance(Coss):
115pF
Input Capacitance(Ciss):
650pF
Pd - Power Dissipation:
1.32W
Gate Charge(Qg):
7.3nC@4.5V
Mfr. Part #:
AO3407A
Package:
SOT-23
Product Description

Product Overview

The AO3407A is a P-channel, 30V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for various small power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Key advantages include super low gate charge and excellent Cdv/dt effect decline.

Product Attributes

  • Brand: HS-Semi
  • Product Type: P-Channel MOSFET
  • Switching Speed: Fast Switching
  • Technology: Trench MOSFET
  • Compliance: RoHS, Green Product
  • Availability: Green Device Available

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ -10V1 -4 A
ID@TC=70 Continuous Drain Current, VGS @ -10V1 -3.6 A
IDM Pulsed Drain Current2 -14 A
PD@TA=25 Total Power Dissipation3 1.32 W
PD@TA=70 Total Power Dissipation3 0.84 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-ambient1 125 /W
RJA Thermal Resistance Junction-Ambient (t 10s)1 95 /W
RJC Thermal Resistance Junction-Case1 80 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 V
BVDSS/TJ BVDSS Temperature Coefficient Reference to 25 , ID=-1mA -0.02 V/
RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-3A 47 60 m
VGS=-4.5V , ID=-1.5A 65 90 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1 -1.5 -2.2 V
VGS(th) VGS(th) Temperature Coefficient 4.32 mV/
IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25 -1 uA
VDS=-24V , VGS=0V , TJ=55 -5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V 100 nA
gfs Forward Transconductance VDS=-5V , ID=-3A 4.8 S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 24 48
Qg Total Gate Charge (-4.5V) VDS=-20V , VGS=-4.5V , ID=-3A 5.22 7.3 nC
Qgs Gate-Source Charge 1.25 1.8 nC
Qgd Gate-Drain Charge 2.3 3.2 nC
td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3 ID=-1A 18.4 37 ns
tr Rise Time 11.4 21 ns
td(off) Turn-Off Delay Time 39.4 79 ns
tf Fall Time 5.2 10.4 ns
Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz 463 650 pF
Coss Output Capacitance 82 115 pF
Crss Reverse Transfer Capacitance 68 95 pF
Diode Characteristics
IS Continuous Source Current1,4 VG=VD=0V , Force Current -4 A
ISM Pulsed Source Current2,4 -14 A
VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25 -1 V

Notes:
1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.

Ordering Information

Part Number Package Code Packaging
AO3407A SOT-23 3000/Tape&Reel

2410121502_HUASHUO-AO3407A_C2828480.pdf
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