High cell density trench P channel MOSFET HUASHUO HSW6113 featuring low gate charge and performance for power stages
Key Attributes
Model Number:
HSW6113
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
115mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.08nF@15V
Pd - Power Dissipation:
1.8W
Gate Charge(Qg):
11.8nC@4.5V
Mfr. Part #:
HSW6113
Package:
SOT-23-6L
Product Description
Product Overview
The HSW6113 is a P-channel, 60V fast-switching MOSFET designed for high cell density trenched applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include a green device availability, super low gate charge, and excellent CdV/dt effect decline, leveraging advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- Packaging: 3000/Tape&Reel
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSW6113 | Drain-Source Voltage (VDS) | -60 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | ||||
| Continuous Drain Current (ID) @ TA=25, VGS @ -10V | -4.5 | A | ||||
| Continuous Drain Current (ID) @ TA=70, VGS @ -10V | -3.0 | A | ||||
| Pulsed Drain Current (IDM) | -15 | A | ||||
| Total Power Dissipation (PD) @ TA=25 | 1.8 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -60 | V | |||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=-10V , ID=-3A | 90 | m | |||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.2 | -2.5 | V | ||
| Drain-Source Leakage Current (IDSS) | VDS=-48V , VGS=0V , TJ=25 | 1 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | ±100 | nA | |||
| Total Gate Charge (Qg) | VDS=-48V , VGS=-4.5V , ID=-3A | 11.8 | nC | |||
| Input Capacitance (Ciss) | VDS=-15V , VGS=0V , f=1MHz | 1080 | pF | |||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | -3 | A | |||
| HSW6113 | Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | -1.2 | V |
Note: Data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper. Pulsed data: pulse width ≤ 300µs, duty cycle ≤ 2%. Power dissipation limited by 150 junction temperature.
2410121447_HUASHUO-HSW6113_C22359229.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
