Lead free green compliant n channel mosfet HUAYI HY1906P featuring 6 milliohm on resistance for power management
Key Attributes
Model Number:
HY1906P
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-
RDS(on):
7.5mΩ@10V,60A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
276pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.577nF
Output Capacitance(Coss):
876pF
Pd - Power Dissipation:
188W
Gate Charge(Qg):
96nC@10V
Mfr. Part #:
HY1906P
Package:
TO-220FB-3L
Product Description
Product Overview
The HY1906P/B is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a 60V/120A rating and low on-resistance (RDS(ON) = 6.0 m typ. @ VGS=10V). This device is avalanche rated, reliable, and rugged. Lead-free and green devices are available, complying with RoHS standards.
Product Attributes
- Brand: HOOYI
- Product Series: HY1906P/B
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
- Origin: China
Technical Specifications
| Model | Parameter | Rating | Unit |
| HY1906P/B | Drain-Source Voltage (VDSS) | 60 | V |
| Gate-Source Voltage (VGSS) | ±25 | V | |
| Continuous Drain Current (ID) @ TC=25°C | 120 | A | |
| Continuous Drain Current (ID) @ TC=100°C | 80 | A | |
| Pulsed Drain Current (IDM) @ TC=25°C | 276 | A | |
| Maximum Power Dissipation (PD) @ TC=25°C | 188 | W | |
| Maximum Power Dissipation (PD) @ TC=100°C | 94 | W | |
| RDS(ON) @ VGS=10V, IDS=60A | 6.0 (typ.) / 7.5 (max.) | mΩ | |
| Common Ratings | Maximum Junction Temperature (TJ) | 175 | °C |
| Storage Temperature Range (TSTG) | -55 to 175 | °C | |
| Thermal Resistance-Junction to Case (RθJC) | 0.8 | °C/W | |
| Thermal Resistance-Junction to Ambient (RθJA) | 62.5 | °C/W | |
| Diode Characteristics | Diode Forward Voltage (VSD) @ ISD=60A | 0.8 (typ.) / 1.2 (max.) | V |
| Reverse Recovery Time (trr) | 50 (typ.) | ns | |
| Reverse Recovery Charge (Qrr) @ ISD=60A, dlSD/dt=100A/µs | 95 (typ.) | nC | |
| Dynamic Characteristics | Gate Resistance (RG) | 1.0 (typ.) | Ω |
| Input Capacitance (Ciss) | 4577 (typ.) | pF | |
| Output Capacitance (Coss) | 876 (typ.) | pF | |
| Reverse Transfer Capacitance (Crss) | 276 (typ.) | pF | |
| Gate Charge Characteristics | Total Gate Charge (Qg) @ VDS=30V, VGS=10V, IDS=60A | 96 (typ.) | nC |
| Gate-Source Charge (Qgs) | 21 (typ.) | nC | |
| Gate-Drain Charge (Qgd) | 23 (typ.) | nC |
2410121704_HUAYI-HY1906P_C127453.pdf
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