High cell density complementary MOSFET HUASHUO HSBA4903 series with RoHS and Green Product compliance
Key Attributes
Model Number:
HSBA4903
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
26A
RDS(on):
70mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
108pF
Input Capacitance(Ciss):
1.004nF
Pd - Power Dissipation:
35W
Gate Charge(Qg):
6nC@4.5V
Mfr. Part #:
HSBA4903
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA4903 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for synchronous buck converter applications. The HSBA4903 series is RoHS and Green Product compliant, with 100% EAS guaranteed and full function reliability approval.
Product Attributes
- Brand: HS-Semi
- Product Line: HSBA4903
- Compliance: RoHS, Green Product
- Key Feature: 100% EAS Guaranteed
- Technology: Advanced high cell density Trench technology
Technical Specifications
| Symbol | Parameter | N-Ch Rating | P-Ch Rating | Units | Conditions | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 40 | -40 | V | VGS=0V | 40 | --- | --- |
| --- | --- | V | VGS=0V , ID=250uA | --- | --- | --- | ||
| VGS | Gate-Source Voltage | 20 | V | --- | --- | --- | --- | |
| --- | --- | V | VGS=20V , VDS=0V | --- | --- | 100 | ||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 26 | -25 | A | TC=25 | --- | --- | --- |
| --- | --- | A | VG=VD=0V , Force Current1,5 | --- | --- | 23 | ||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 18 | -16 | A | TC=100 | --- | --- | --- |
| --- | --- | A | VG=VD=0V , Force Current1,5 | --- | --- | -20 | ||
| IDM | Pulsed Drain Current2 | 47 | -46 | A | Pulsed | --- | --- | --- |
| --- | --- | A | Pulsed2,5 | --- | --- | 46 | ||
| EAS | Single Pulse Avalanche Energy3 | 28 | 66 | mJ | Single Pulse | --- | --- | --- |
| --- | --- | mJ | VDD=25V,VGS=10V,L=0.1mH,IAS=17.8A | --- | --- | --- | ||
| IAS | Avalanche Current | 17.8 | -27.2 | A | --- | --- | --- | --- |
| --- | --- | A | VDD=-25V,VGS=-10V,L=0.1mH | --- | --- | --- | ||
| PD@TC=25 | Total Power Dissipation4 | 35 | W | TC=25 | --- | --- | --- | |
| --- | --- | W | Limited by 150 junction temperature | --- | --- | --- | ||
| TSTG | Storage Temperature Range | -55 to 150 | --- | -55 | --- | 150 | ||
| TJ | Operating Junction Temperature Range | -55 to 150 | --- | -55 | --- | 150 | ||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | --- | --- | --- | |
| RJC | Thermal Resistance Junction-Case1 | --- | 3.5 | /W | --- | --- | --- | |
| BVDSS | Drain-Source Breakdown Voltage | 40 | -40 | V | VGS=0V , ID=250uA | 40 | --- | --- |
| BVDSS/TJ | BVDSS Temperature Coefficient | --- | --- | V/ | Reference to 25 , ID=1mA | --- | 0.034 | --- |
| RDS(ON) | Static Drain-Source On-Resistance2 | --- | --- | m | VGS=10V , ID=12A | --- | --- | 30 |
| RDS(ON) | Static Drain-Source On-Resistance2 | --- | --- | m | VGS=-10V , ID=-8A | --- | --- | 45 |
| RDS(ON) | Static Drain-Source On-Resistance2 | --- | --- | m | VGS=4.5V , ID=10A | --- | --- | 50 |
| VGS(th) | Gate Threshold Voltage | --- | --- | V | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 |
| VGS(th) | Gate Threshold Voltage | --- | --- | V | VGS=VDS , ID =-250uA | -1.0 | -1.6 | -2.5 |
| VGS(th) | VGS(th) Temperature Coefficient | --- | --- | mV/ | --- | --- | -4.56 | --- |
| VGS(th) | VGS(th) Temperature Coefficient | --- | --- | mV/ | --- | --- | 4.32 | --- |
| IDSS | Drain-Source Leakage Current | --- | --- | uA | VDS=32V , VGS=0V , TJ=25 | --- | --- | 1 |
| IDSS | Drain-Source Leakage Current | --- | --- | uA | VDS=-32V , VGS=0V , TJ=25 | --- | --- | 1 |
| IDSS | Drain-Source Leakage Current | --- | --- | uA | VDS=32V , VGS=0V , TJ=55 | --- | --- | 5 |
| IDSS | Drain-Source Leakage Current | --- | --- | uA | VDS=-32V , VGS=0V , TJ=55 | --- | --- | 5 |
| IGSS | Gate-Source Leakage Current | 100 | nA | VGS=20V , VDS=0V | --- | --- | --- | |
| gfs | Forward Transconductance | --- | --- | S | VDS=5V , ID=12A | --- | 8 | --- |
| gfs | Forward Transconductance | --- | --- | S | VDS=-5V , ID=-8A | --- | 12.6 | --- |
| Rg | Gate Resistance | --- | --- | VDS=0V , VGS=0V , f=1MHz | --- | 2.6 | 5.2 | |
| Rg | Gate Resistance | --- | --- | VDS=0V , VGS=0V , f=1MHz | --- | 13 | 16 | |
| Qg | Total Gate Charge (4.5V) | --- | --- | nC | VDS=20V , VGS=4.5V , ID=12A | --- | 5.5 | --- |
| Qg | Total Gate Charge (-4.5V) | --- | --- | nC | VDS=-20V , VGS=-4.5V , ID=-12A | --- | 9 | --- |
| Qgs | Gate-Source Charge | --- | --- | nC | --- | --- | 1.25 | --- |
| Qgs | Gate-Source Charge | --- | --- | nC | --- | --- | 2.54 | --- |
| Qgd | Gate-Drain Charge | --- | --- | nC | --- | --- | 2.5 | --- |
| Qgd | Gate-Drain Charge | --- | --- | nC | --- | --- | 3.1 | --- |
| Td(on) | Turn-On Delay Time | --- | --- | ns | VDD=20V , VGS=10V , RG=3.3 ID=1A | --- | 8.9 | --- |
| Td(on) | Turn-On Delay Time | --- | --- | ns | VDD=-15V , VGS=-10V , RG=3.3, ID=-1A | --- | 19.2 | --- |
| Tr | Rise Time | --- | --- | ns | --- | --- | 2.2 | --- |
| Tr | Rise Time | --- | --- | ns | --- | --- | 12.8 | --- |
| Td(off) | Turn-Off Delay Time | --- | --- | ns | --- | --- | 41 | --- |
| Td(off) | Turn-Off Delay Time | --- | --- | ns | --- | --- | 48.6 | --- |
| Tf | Fall Time | --- | --- | ns | --- | --- | 2.7 | --- |
| Tf | Fall Time | --- | --- | ns | --- | --- | 4.6 | --- |
| Ciss | Input Capacitance | --- | --- | pF | VDS=15V , VGS=0V , f=1MHz | --- | 593 | --- |
| Ciss | Input Capacitance | --- | --- | pF | VDS=-15V , VGS=0V , f=1MHz | --- | 1004 | --- |
| Coss | Output Capacitance | --- | --- | pF | --- | --- | 76 | --- |
| Coss | Output Capacitance | --- | --- | pF | --- | --- | 108 | --- |
| Crss | Reverse Transfer Capacitance | --- | --- | pF | --- | --- | 56 | --- |
| Crss | Reverse Transfer Capacitance | --- | --- | pF | --- | --- | 80 | --- |
| VSD | Diode Forward Voltage2 | --- | --- | V | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 |
| VSD | Diode Forward Voltage2 | --- | --- | V | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1 |
Notes:
- The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- The data tested by pulsed, pulse width 300us, duty cycle 2%.
- The EAS data shows Max. rating. The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=17.8A (N-Ch) or VDD=-25V,VGS=-10V,L=0.1mH,IAS=-27.2A (P-Ch).
- The power dissipation is limited by 150 junction temperature.
- The data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2410121523_HUASHUO-HSBA4903_C2987719.pdf
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