High cell density P channel MOSFET HUASHUO HSU60P02 designed for fast switching and power conversion
Key Attributes
Model Number:
HSU60P02
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@4.5V,15A
Gate Threshold Voltage (Vgs(th)):
650mV
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
431pF
Number:
1 P-Channel
Output Capacitance(Coss):
509pF
Input Capacitance(Ciss):
4.6nF
Pd - Power Dissipation:
70W
Gate Charge(Qg):
44nC@4.5V
Mfr. Part #:
HSU60P02
Package:
TO-252
Product Description
Product Overview
The HSU60P02 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements with full function reliability approval, featuring super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSU60P02 | Drain-Source Voltage (VDS) | -20 | V | |||
| Gate-Source Voltage (VGS) | ±12 | V | ||||
| Continuous Drain Current (ID) | @TC=25, VGS @ -4.5V | -60 | A | |||
| Continuous Drain Current (ID) | @TC=100, VGS @ -4.5V | -39 | A | |||
| Pulsed Drain Current (IDM) | -240 | A | ||||
| Total Power Dissipation (PD) | @TC=25 | 70 | W | |||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Case (RJC) | 2.1 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=-250uA | -20 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V, ID=-15A | 6.6 | 8.5 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-2.5V, ID=-12A | 8 | 12 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID =-250uA | -0.35 | -0.65 | -1.0 | V | |
| Total Gate Charge (Qg) | VDS=-10V, VGS=-4.5V, ID=-15A | 44 | nC | |||
| Input Capacitance (Ciss) | VDS=-10V, VGS=0V, f=1MHz | 4600 | pF | |||
| Output Capacitance (Coss) | VDS=-10V, VGS=0V, f=1MHz | 509 | pF | |||
| Reverse Transfer Capacitance (Crss) | VDS=-10V, VGS=0V, f=1MHz | 431 | pF | |||
| Continuous Source Current (IS) | VG=VD=0V, Force Current | -60 | A | |||
| Pulsed Source Current (ISM) | -240 | A | ||||
| Diode Forward Voltage (VSD) | VGS=0V, IS=-1A, TJ=25 | -1.2 | V | |||
| Reverse Recovery Time (trr) | IF=-15A, dI/dt=100A/s, TJ =25 | 17 | nS | |||
| Reverse Recovery Charge (Qrr) | IF=-15A, dI/dt=100A/s, TJ =25 | 7.8 | nC |
| Package Code | Packaging | Quantity |
|---|---|---|
| TO-252 | 2500/Tape&Reel | 2500 |
2410121656_HUASHUO-HSU60P02_C845610.pdf
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