High cell density complementary MOSFET series HUASHUO HSCB2903 optimized for switching and power management
Key Attributes
Model Number:
HSCB2903
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
100mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
73pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
82pF
Pd - Power Dissipation:
1.6W
Input Capacitance(Ciss):
677pF
Gate Charge(Qg):
10.1nC@4.5V
Mfr. Part #:
HSCB2903
Package:
DFN-6L-EP(2x2)
Product Description
Product Overview
The HSCB2903 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDSON and gate charge characteristics, making them ideal for most small power switching and load switch applications. The HSCB2903 series meets RoHS and Green Product requirements with full function reliability approval.
Product Attributes
- Brand: HS (implied by www.hs-semi.cn)
- Certifications: RoHS, Green Product
- Technology: Advanced high cell density Trench technology
Technical Specifications
| Model | N-Channel Parameters | P-Channel Parameters | Units |
|---|---|---|---|
| HSCB2903 | Drain-Source Voltage (VDS) | Drain-Source Voltage (VDS) | 20 / -20 V |
| Gate-Source Voltage (VGS) | Gate-Source Voltage (VGS) | 12 V | |
| Continuous Drain Current (ID@TA=25, VGS @ -4.5V) | Continuous Drain Current (ID@TA=25, VGS @ -4.5V) | 5 / -4.5 A | |
| Continuous Drain Current (ID@TA=70, VGS @ -4.5V) | Continuous Drain Current (ID@TA=70, VGS @ -4.5V) | 4.2 / -3.7 A | |
| Pulsed Drain Current (IDM) | Pulsed Drain Current (IDM) | 15 / -12 A | |
| Total Power Dissipation (PD@TA=25) | Total Power Dissipation (PD@TA=25) | 1.6 W | |
| Storage Temperature Range (TSTG) | Storage Temperature Range (TSTG) | -55 to 150 | |
| HSCB2903 (Electrical Characteristics @ TJ=25 ) | Drain-Source Breakdown Voltage (BVDSS) (VGS=0V, ID=250uA) | Drain-Source Breakdown Voltage (BVDSS) (VGS=0V, ID=-250uA) | 20 / -20 V |
| Static Drain-Source On-Resistance (RDS(ON)) (VGS=4.5V, ID=3A) | Static Drain-Source On-Resistance (RDS(ON)) (VGS=-4.5V, ID=-3A) | 28-40 / 85-100 m | |
| Gate Threshold Voltage (VGS(th)) (VGS=VDS, ID=250uA) | Gate Threshold Voltage (VGS(th)) (VGS=VDS, ID=-250uA) | 0.4-1 / -0.4 to -1 V | |
| Drain-Source Leakage Current (IDSS) (VDS=16V, VGS=0V, TJ=25) | Drain-Source Leakage Current (IDSS) (VDS=-16V, VGS=0V, TJ=25) | 1 / -1 uA | |
| Gate-Source Leakage Current (IGSS) (VGS=12V, VDS=0V) | Gate-Source Leakage Current (IGSS) (VGS=12V, VDS=0V) | 100 nA | |
| Forward Transconductance (gfs) (VDS=5V, ID=3A) | Forward Transconductance (gfs) (VDS=-5V, ID=-3A) | 10.5 / 12.2 S | |
| Total Gate Charge (Qg) (VDS=15V, VGS=4.5V, ID=3A) | Total Gate Charge (Qg) (VDS=-15V, VGS=-4.5V, ID=-3A) | 4.6 / 10.1 nC | |
| Turn-On Delay Time (Td(on)) (VDD=10V, VGS=4.5V, RG=3.3, ID=3A) | Turn-On Delay Time (Td(on)) (VDD=-10V, VGS=-4.5V, RG=3.3, ID=-3A) | 1.6 / 5.6 ns | |
| Input Capacitance (Ciss) (VDS=15V, VGS=0V, f=1MHz) | Input Capacitance (Ciss) (VDS=-15V, VGS=0V, f=1MHz) | 310 / 677 pF | |
| Output Capacitance (Coss) (VDS=15V, VGS=0V, f=1MHz) | Output Capacitance (Coss) (VDS=-15V, VGS=0V, f=1MHz) | 49 / 82 pF |
Note: Specific conditions for some parameters are detailed in the original datasheet.
2410121653_HUASHUO-HSCB2903_C2903561.pdf
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