HSU6006 Fast Switching N Channel MOSFET with Low Rdson and Super Low Gate Charge Characteristics
Key Attributes
Model Number:
HSU6006
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
35A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
97pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.423nF@15V
Pd - Power Dissipation:
45W
Gate Charge(Qg):
19.3nC@4.5V
Mfr. Part #:
HSU6006
Package:
TO-252-2
Product Description
Product Overview
The HSU6006 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.Product Attributes
- Brand: HS-Semi
- Product Type: N-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSU6006 | Drain-Source Voltage (VDS) | 60 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | ||||
| Continuous Drain Current (ID@TC=25) | VGS @ 10V1 | 35 | A | |||
| Continuous Drain Current (ID@TC=100) | VGS @ 10V1 | 22 | A | |||
| Continuous Drain Current (ID@TA=25) | VGS @ 10V1 | 7.4 | A | |||
| Continuous Drain Current (ID@TA=70) | VGS @ 10V1 | 6 | A | |||
| Pulsed Drain Current (IDM)2 | 80 | A | ||||
| Single Pulse Avalanche Energy (EAS)3 | 39.2 | mJ | ||||
| Avalanche Current (IAS) | 28 | A | ||||
| Total Power Dissipation (PD@TC=25)4 | 45 | W | ||||
| Total Power Dissipation (PD@TA=25)4 | 2 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| HSU6006 | Thermal Resistance Junction-Ambient (RJA)1 | --- | 62 | /W | ||
| Thermal Resistance Junction-Case (RJC)1 | --- | 2.8 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 60 | --- | --- | V | |
| Static Drain-Source On-Resistance (RDS(ON),max)2 | VGS=10V , ID=20A | --- | 20 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V | |
| HSU6006 | Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=25 | --- | 1 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | --- | ±100 | nA | ||
| Forward Transconductance (gfs) | VDS=5V , ID=15A | 45 | --- | S | ||
| HSU6006 | Total Gate Charge (Qg) (4.5V) | VDS=48V , VGS=4.5V , ID=15A | 19.3 | --- | nC | |
| Gate-Source Charge (Qgs) | 7.1 | --- | ||||
| Gate-Drain Charge (Qgd) | 7.6 | --- | ||||
| HSU6006 | Turn-On Delay Time (Td(on)) | VDD=30V , VGS=10V , RG=3.3, ID=15A | 7.2 | --- | ns | |
| Rise Time (Tr) | 50 | --- | ||||
| Turn-Off Delay Time (Td(off)) | 36.4 | --- | ||||
| Fall Time (Tf) | 7.6 | --- | ||||
| HSU6006 | Input Capacitance (Ciss) | VDS=15V , VGS=0V , f=1MHz | 2423 | --- | pF | |
| Output Capacitance (Coss) | 145 | --- | ||||
| Reverse Transfer Capacitance (Crss) | 97 | --- | ||||
| HSU6006 | Continuous Source Current (IS)1,5 | VG=VD=0V , Force Current | --- | 35 | A | |
| Pulsed Source Current (ISM)2,5 | --- | 80 | A | |||
| HSU6006 | Diode Forward Voltage (VSD)2 | VGS=0V , IS=A , TJ=25 | --- | 1 | V | |
| Reverse Recovery Time (trr) | IF=15A , dI/dt=100A/s , TJ=25 | 16.3 | --- | nS | ||
| HSU6006 | Reverse Recovery Charge (Qrr) | 11 | --- | nC | ||
| Package Information | ||||||
| HSU6006 | Package | TO252-2 | ||||
| HSU6006 | Packaging | 2500/Tape&Reel | ||||
2410121456_HUASHUO-HSU6006_C701007.pdf
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