Switching MOSFET HUAYI HYG065N07NS1MF Designed for Inverter Systems and Motor Control Applications
Key Attributes
Model Number:
HYG065N07NS1MF
Product Custom Attributes
Drain To Source Voltage:
70V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
26pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
125W
Input Capacitance(Ciss):
2.99nF
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
HYG065N07NS1MF
Package:
TO-220F-3
Product Description
Product Overview
The HYG065N07NS1MF is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers high performance with a low RDS(ON) of 5.5 m (typ.) at VGS = 10V, 70V/100A rating, and 100% avalanche tested for reliability and ruggedness. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HYG (Huayi Microelectronics)
- Origin: China
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 MSL Classification
Technical Specifications
| Parameter | Test Conditions | Unit | Min | Typ. | Max | |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | V | - | - | 70 | |
| VGSS | Gate-Source Voltage | V | - | ±20 | - | |
| TJ | Junction Temperature Range | °C | -55 | - | 175 | |
| TSTG | Storage Temperature Range | °C | -55 | - | 175 | |
| IS | Source Current-Continuous (Body Diode) Tc=25°C | A | - | - | 100 | |
| IDM | Pulsed Drain Current Tc=25°C | A | - | - | 330 | |
| ID | Continuous Drain Current Tc=25°C | A | - | - | 100 | |
| ID | Continuous Drain Current Tc=100°C | A | - | - | 70.7 | |
| PD | Maximum Power Dissipation Tc=25°C | W | - | - | 125 | |
| PD | Maximum Power Dissipation Tc=100°C | W | - | - | 62.5 | |
| RθJC | Thermal Resistance, Junction-to-Case | °C/W | - | 1.2 | - | |
| RθJA | Thermal Resistance, Junction-to-Ambient | °C/W | - | 62.5 | - | |
| EAS | Single Pulsed-Avalanche Energy L=0.3mH | mJ | - | 223 | - | |
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage VGS=0V,IDS= 250μA | V | 70 | - | - | |
| IDSS | Drain-to-Source Leakage Current VDS= 70V,VGS=0V | μA | - | - | 1 | |
| IDSS | Drain-to-Source Leakage Current TJ=125°C | μA | - | - | 50 | |
| VGS(th) | Gate Threshold Voltage VDS=VGS, IDS= 250μA | V | 2 | 3 | 4 | |
| IGSS | Gate-Source Leakage Current VGS=±20V,VDS=0V | nA | - | - | ±100 | |
| RDS(ON) | Drain-Source On-State Resistance VGS= 10V,IDS=40A | mΩ | - | 5.5 | 6.5 | |
| VSD | Diode Forward Voltage ISD=40A,VGS=0V | V | - | 0.9 | 1.2 | |
| trr | Reverse Recovery Time ISD=40A,dISD/dt=100A/μs | ns | - | 29 | - | |
| Qrr | Reverse Recovery Charge | nC | - | 24 | - | |
| RG | Gate Resistance VGS=0V,VDS=0V,F=1MHz | Ω | - | 3.3 | - | |
| Ciss | Input Capacitance VGS=0V, VDS= 25V, Frequency=1.0MHz | pF | - | 2990 | - | |
| Coss | Output Capacitance | pF | - | 910 | - | |
| Crss | Reverse Transfer Capacitance | pF | - | 26 | - | |
| td(ON) | Turn-on Delay Time VDD= 35V,RG=4.0Ω, IDS= 40A,VGS= 10V | ns | - | 15 | - | |
| Tr | Turn-on Rise Time | ns | - | 80 | - | |
| td(OFF) | Turn-off Delay Time | ns | - | 43 | - | |
| Tf | Turn-off Fall Time | ns | - | 72 | - | |
| Qg | Total Gate Charge VDS = 56V, VGS= 10V, IDs= 20A | nC | - | 52 | - | |
| Qgs | Gate-Source Charge | nC | - | 16 | - | |
| Qgd | Gate-Drain Charge | nC | - | 12 | - | |
2410121714_HUAYI-HYG065N07NS1MF_C2931345.pdf
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