Low RDS ON 100V N Channel MOSFET HUASHUO HSH15810 Designed for High Frequency Switching and Battery Management
Key Attributes
Model Number:
HSH15810
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
14pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
4.725nF@50V
Pd - Power Dissipation:
227W
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
HSH15810
Package:
TO-263
Product Description
Product Overview
The HSH15810 is a N-Channel, 100V fast switching MOSFET designed for high-frequency applications. It features a super low RDS(ON) and utilizes advanced high cell density Trench technology. This device is 100% EAS Guaranteed and is available as a Green Device. Key applications include motor drivers, Battery Management Systems (BMS), and high-frequency switching with synchronous rectification.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced high cell density Trench technology
- Certifications: 100% EAS Guaranteed, Green Device Available
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSH15810 | Drain-Source Voltage (VDS) | 100 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | ||||
| Continuous Drain Current (ID@TC=25) | VGS @ 10V1,6 | 120 | A | |||
| Continuous Drain Current (ID@TC=100) | VGS @ 10V1,6 | 100 | A | |||
| Pulsed Drain Current (IDM)2 | 480 | A | ||||
| Single Pulse Avalanche Energy (EAS)3 | 196 | mJ | ||||
| Avalanche Current (IAS) | 28 | A | ||||
| Total Power Dissipation (PD@TC=25)4 | 227 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 100 | V | |||
| Static Drain-Source On-Resistance (RDS(ON))2 | VGS=10V , ID=30A | 3.7 | 4.5 | mΩ | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=100V , VGS=0V , TJ=25 | 1 | µA | |||
| HSH15810 | Drain-Source Leakage Current (IDSS) | VDS=100V , VGS=0V , TJ=125 | 10 | µA | ||
| Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | ±100 | nA | |||
| HSH15810 | Thermal Resistance Junction-Ambient (RθJA) | --- | 62 | °C/W | ||
| Thermal Resistance Junction-Case (RθJC)1 | --- | 0.5 | °C/W | |||
| Forward Transconductance (gfs) | VDS=5V , ID=30A | 50 | S | |||
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | 1 | Ω | |||
| Total Gate Charge (Qg) (10V) | VDS=50V , VGS=10V , ID=20A | 72 | nC | |||
| Gate-Source Charge (Qgs) | 28 | |||||
| Gate-Drain Charge (Qgd) | 15 | |||||
| Turn-On Delay Time (Td(on)) | VDD=50V , VGS=10V , RG=3.0Ω, ID=20A | 35 | ns | |||
| Rise Time (Tr) | 18 | ns | ||||
| Turn-Off Delay Time (Td(off)) | 45 | ns | ||||
| Fall Time (Tf) | 55 | ns | ||||
| HSH15810 | Input Capacitance (Ciss) | VDS=50V , VGS=0V , f=1MHz | 4725 | pF | ||
| Output Capacitance (Coss) | 609 | pF | ||||
| Reverse Transfer Capacitance (Crss) | 14 | pF | ||||
| HSH15810 | Continuous Source Current (IS)1,5 | VG=VD=0V , Force Current | 120 | A | ||
| Diode Forward Voltage (VSD)2 | VGS=0V , IS=50A , TJ=25 | 1.3 | V | |||
| Reverse Recovery Time (trr) | IF=30A , dI/dt=100A/µs , TJ=25 | 70 | ns | |||
| HSH15810 | Reverse Recovery Charge (Qrr) | 170 | nC |
2410121642_HUASHUO-HSH15810_C701020.pdf
Related Products
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
