86--136 6733 2386
quality N Channel MOSFET HUASHUO HSU6048 Featuring Trench Technology and Superior Switching Characteristics factory
quality N Channel MOSFET HUASHUO HSU6048 Featuring Trench Technology and Superior Switching Characteristics factory

N Channel MOSFET HUASHUO HSU6048 Featuring Trench Technology and Superior Switching Characteristics

Key Attributes
Model Number: HSU6048
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
22pF
Number:
1 N-channel
Output Capacitance(Coss):
1.522nF
Input Capacitance(Ciss):
3.458nF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
58nC@10V
Mfr. Part #:
HSU6048
Package:
TO-252
Product Description

Product Overview

The HSU6048 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

Product Attributes

  • Brand: HS-Semi
  • Model: HSU6048
  • Channel Type: N-Channel
  • Switching Speed: Fast Switching
  • Technology: Trench
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current1,6 90 A
ID@TC=100 Continuous Drain Current1,6 67 A
IDM Pulsed Drain Current2 240 A
EAS Single Pulse Avalanche Energy3 101 mJ
IAS Avalanche Current 54 A
PD@TC=25 Total Power Dissipation4 60 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient --- 60 /W
RJC Thermal Resistance Junction-Case1 --- 1.8 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 60 --- --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=20A 3.5 3.6 m
VGS=4.5V , ID=15A 4.7 5.4 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 --- 2.3 V
IDSS Drain-Source Leakage Current VDS=48V , VGS=0V , TJ=25 --- 1 uA
VDS=48V , VGS=0V , TJ=55 --- 5 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=20A 65 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 0.7 ---
Qg Total Gate Charge (10V) VDS=30V , VGS=10V , ID=20A 58 --- nC
Qgs Gate-Source Charge 16 ---
Qgd Gate-Drain Charge 4 ---
td(on) Turn-On Delay Time VDD=30V , VGS=10V , RG=3, ID=20A 18 --- ns
tr Rise Time 8 --- ns
td(off) Turn-Off Delay Time 50 --- ns
tf Fall Time 10.5 --- ns
Ciss Input Capacitance VDS=30V , VGS=0V , f=1MHz 3458 --- pF
Coss Output Capacitance 1522 --- pF
Crss Reverse Transfer Capacitance 22 --- pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- 90 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 --- 1.2 V
trr Reverse Recovery Time IF=20A , dI/dt=100A/s , TJ=25 24 --- nS
Qrr Reverse Recovery Charge 85 --- nC

2410122016_HUASHUO-HSU6048_C22359250.pdf
Related Products
quality Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits factory
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
quality Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic factory
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
quality Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature factory
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
quality Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification factory
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.