N Channel Enhancement Mode MOSFET HYG024N03LR1B for Switching and Power Management Applications
Key Attributes
Model Number:
HYG024N03LR1B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.3mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
450pF
Number:
1 N-channel
Output Capacitance(Coss):
566pF
Input Capacitance(Ciss):
3.992nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
89.8nC@10V
Mfr. Part #:
HYG024N03LR1B
Package:
TO-263-2L
Product Description
Product Overview
The HYG024N03LR1 is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with low RDS(ON) at various gate-source voltages, 100% avalanche tested, and a reliable, rugged construction. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: Hymexa
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 MSL Classification
Technical Specifications
| Model | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| HYG024N03LR1 | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250A | 30 | - | - | V |
| Drain-to-Source Leakage Current (IDSS) | VDS= 30V,VGS=0V | - | - | 1 | A | |
| Drain-to-Source Leakage Current (IDSS) | TJ=125C | - | - | 50 | A | |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 1.0 | 1.4 | 3.0 | V | |
| Gate-Source Leakage Current (IGSS) | VGS=20V,VDS=0V | - | - | 100 | nA | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS= 10V,IDS=20A | - | 2.1 | 2.6 | m | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS= 4.5V,IDS=20A | - | 2.7 | 3.3 | m | |
| Diode Forward Voltage (VSD) | ISD=20A,VGS=0V | - | 0.76 | 1.2 | V | |
| Reverse Recovery Time (trr) | ISD=20A,dISD/dt=100A/s | - | 23 | - | ns | |
| HYG024N03LR1 | Input Capacitance (Ciss) | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 3992 | - | pF |
| Output Capacitance (Coss) | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 566 | - | pF | |
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 450 | - | pF | |
| Turn-on Delay Time (td(ON)) | VDD=15V,RG=2.5, IDS=20A,VGS=10V | - | 10.9 | - | ns | |
| Turn-on Rise Time (Tr) | VDD=15V,RG=2.5, IDS=20A,VGS=10V | - | 49.7 | - | ns | |
| Turn-off Delay Time (td(OFF)) | VDD=15V,RG=2.5, IDS=20A,VGS=10V | - | 76.6 | - | ns | |
| HYG024N03LR1 | Total Gate Charge (Qg) | VDS =24V, IDs=20A, VGS= 10V | - | 89.8 | - | nC |
| Total Gate Charge (Qg) | VDS =24V, IDs=20A, VGS= 4.5V | - | 46.9 | - | nC | |
| Gate-Drain Charge (Qgd) | VDS =24V, IDs=20A, VGS= 10V | - | 22.8 | - | nC |
Absolute Maximum Ratings
| Symbol | Parameter | Rating | Unit |
| VDSS | Drain-Source Voltage | 30 | V |
| VGSS | Gate-Source Voltage | 20 | V |
| TJ | Junction Temperature Range | -55 to 175 | C |
| TSTG | Storage Temperature Range | -55 to 175 | C |
| ID | Continuous Drain Current | 160 (Tc=25C), 113 (Tc=100C) | A |
| IDM | Pulsed Drain Current | 640 (Tc=25C) | A |
| PD | Maximum Power Dissipation | 125 (Tc=25C), 62.5 (Tc=100C) | W |
| RJC | Thermal Resistance, Junction-to-Case | 1.2 | C/W |
| RJA | Thermal Resistance, Junction-to-Ambient | 62.5 (Surface mounted on 1in FR-4 board) | C/W |
| EAS | Single Pulsed-Avalanche Energy | 360 (L=0.3mH) | mJ |
2410121257_HUAYI-HYG024N03LR1B_C2843503.pdf
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