N channel mosfet huashuo hsu20n15a featuring high cell density trench technology and 150 volt rating
Key Attributes
Model Number:
HSU20N15A
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
23A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
47mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
4pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
1.19nF@75V
Pd - Power Dissipation:
72.6W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
HSU20N15A
Package:
TO-252-2
Product Description
Product Overview
The HSU20N15A is a high-performance N-channel MOSFET featuring an N-Ch 150V rating and fast switching capabilities. Designed with extreme high cell density, it offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Ch Fast Switching MOSFETs
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Device Available
- Reliability: 100% EAS guaranteed with full function reliability approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 150 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 23 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 16 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 4.5 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 3.8 | A | |||
| IDM | Pulsed Drain Current2 | 60 | A | |||
| PD@TC=25 | Total Power Dissipation3 | 72.6 | W | |||
| PD@TA=25 | Total Power Dissipation3 | 2.7 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | --- | 55 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 2 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 150 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=10A | 47 | 56 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 2 | --- | 4 | V |
| IDSS | Drain-Source Leakage Current | VDS=120V , VGS=0V , TJ=25 | --- | 1 | uA | |
| IDSS | Drain-Source Leakage Current | VDS=120V , VGS=0V , TJ=55 | --- | 5 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=10A | 25 | --- | S | |
| Qg | Total Gate Charge | VDS=75V , VGS=10V , ID=10A | 23 | --- | nC | |
| Qgs | Gate-Source Charge | 5.8 | --- | |||
| Qgd | Gate-Drain Charge | 4.2 | --- | |||
| td(on) | Turn-On Delay Time | VDD=75V , VGS=10V , RG=3.3 ID=10A | 16 | --- | ns | |
| tr | Rise Time | 18.6 | --- | |||
| td(off) | Turn-Off Delay Time | 28.5 | --- | |||
| tf | Fall Time | 6.5 | --- | |||
| Ciss | Input Capacitance | VDS=75V , VGS=0V , f=1MHz | 1190 | --- | pF | |
| Coss | Output Capacitance | 73 | --- | |||
| Crss | Reverse Transfer Capacitance | 4 | --- | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 20 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
| trr | Reverse Recovery Time | IF=10A , dI/dt=100A/s , TJ=25 | 45 | --- | nS | |
| Qrr | Reverse Recovery Charge | 138 | --- | nC | ||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSU20N15A | TO252-2 | 2500/Tape&Reel | ||||
2410121642_HUASHUO-HSU20N15A_C701011.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
