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quality power switching P channel MOSFET HUASHUO HSU5P20 with super low gate charge and green product status factory
quality power switching P channel MOSFET HUASHUO HSU5P20 with super low gate charge and green product status factory

power switching P channel MOSFET HUASHUO HSU5P20 with super low gate charge and green product status

Key Attributes
Model Number: HSU5P20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 P-Channel
Output Capacitance(Coss):
500pF
Input Capacitance(Ciss):
500pF@100V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
8.5nC@4.5V
Mfr. Part #:
HSU5P20
Package:
TO-252-2L
Product Description

Product Overview

The HSU5P20 is a P-channel, 200V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and availability as a green device.

Product Attributes

  • Brand: HSU (implied by product name HSU5P20)
  • Type: P-Channel MOSFET
  • Technology: Trench
  • Certifications: RoHS, Green Product

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Units
VDS Drain-Source Voltage -200 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ -10V -5 A
ID@TC=70 Continuous Drain Current, VGS @ -10V -3 A
ID@TA=25 Continuous Drain Current, VGS @ -10V -1.2 A
ID@TA=70 Continuous Drain Current, VGS @ -10V -1 A
IDM Pulsed Drain Current -6.5 A
PD@TA=25 Total Power Dissipation 2 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJA Thermal Resistance Junction-ambient 62 /W
RJC Thermal Resistance Junction-Case 7 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -200 V
RDS(ON),Max Static Drain-Source On-Resistance VGS=-10V , ID=-5A 2.4
RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-1A 1.9 2.4
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -2.0 -3.0 -4.0 V
IDSS Drain-Source Leakage Current VDS=-160V , VGS=0V , TJ=25 1 uA
IDSS Drain-Source Leakage Current VDS=-160V , VGS=0V , TJ=55 10 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V 100 nA
gfs Forward Transconductance VDS=-5V , ID=-0.8A 0.5 S
Qg Total Gate Charge VDS=-100V , VGS=-4.5V , ID=-0.5A 8.5 nC
Qgs Gate-Source Charge 1.5
Qgd Gate-Drain Charge 1.8
Td(on) Turn-On Delay Time VDD=-100V , VGS=-10V , RG=6 ID=-0.5A 1.9 ns
Tr Rise Time 1.2 ns
Td(off) Turn-Off Delay Time 22 ns
Tf Fall Time 11 ns
Ciss Input Capacitance VDS=-100V , VGS=0V , f=1MHz 500 pF
Coss Output Capacitance 39 pF
Crss Reverse Transfer Capacitance 20 pF
IS Continuous Source Current VG=VD=0V , Force Current -5 A
VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25 -1.3 V

2410122016_HUASHUO-HSU5P20_C22359258.pdf
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