Single N Channel Enhancement Mode MOSFET HUAYI HYG025N06LS1B with Low RDS ON and High Current Rating
Key Attributes
Model Number:
HYG025N06LS1B
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10.2pF
Number:
1 N-channel
Output Capacitance(Coss):
1.31nF
Input Capacitance(Ciss):
3.915nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
58.3nC@10V
Mfr. Part #:
HYG025N06LS1B
Package:
TO-263-2L
Product Description
HYG025N06LS1P/B Single N-Channel Enhancement Mode MOSFET
The HYG025N06LS1P/B is a single N-Channel enhancement mode MOSFET designed for high-performance applications. It features low on-state resistance (RDS(ON) = 2.5 m typ. @ VGS = 10V) and high continuous drain current capability (160A). This MOSFET is 100% avalanche tested, reliable, and rugged, with halogen-free devices available (RoHS Compliant). It is suitable for high frequency point-of-load synchronous buck converters and power tool applications.
Product Attributes
- Brand: Hymexa
- Product Code: HYG025N06LS1P/B
- Channel Type: Single N-Channel
- Mode: Enhancement Mode
- Certifications: RoHS Compliant, Halogen-Free Available
Technical Specifications
| Parameter | Rating Unit | Test Conditions | Min | Typ. | Max |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 60 V | Tc=25C Unless Otherwise Noted | - | - | - |
| Gate-Source Voltage (VGSS) | 20 V | - | - | - | - |
| Maximum Junction Temperature (TJ) | -55 to 175 C | - | - | - | - |
| Storage Temperature Range (TSTG) | -55 to 175 C | - | - | - | - |
| Source Current-Continuous (IS) (Body Diode) | 160 A | Tc=25C, Mounted on Large Heat Sink | - | - | - |
| Pulsed Drain Current (IDM) | 620 A | Tc=25C, pulse width limited by max.junction temperature | - | - | - |
| Continuous Drain Current (ID) | 160 A | Tc=25C | - | - | - |
| Continuous Drain Current (ID) | 113 A | Tc=100C | - | - | - |
| Maximum Power Dissipation (PD) | 125 W | Tc=25C | - | - | - |
| Maximum Power Dissipation (PD) | 62.5 W | Tc=100C | - | - | - |
| Thermal Resistance, Junction-to-Case (RJC) | 1.2 C/W | - | - | - | - |
| Thermal Resistance, Junction-to-Ambient (RJA) | 62 C/W | Surface mounted on FR-4 board | - | - | - |
| Single Pulsed-Avalanche Energy (EAS) | 301.8 mJ | L=0.3mH, Limited by TJmax, starting TJ=25C, VDS =48V.,VGS =10V | - | - | - |
| Static Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | 60 V | VGS=0V,IDS=250A | 60 | - | - |
| Drain-to-Source Leakage Current (IDSS) | 1 A | VDS=60V,VGS=0V | - | - | 1 |
| Drain-to-Source Leakage Current (IDSS) | 50 A | TJ=100C | - | - | 50 |
| Gate Threshold Voltage (VGS(th)) | 1.0 to 3.0 V | VDS=VGS, IDS=250A | 1.0 | 2.1 | 3.0 |
| Gate-Source Leakage Current (IGSS) | 100 nA | VGS=20V,VDS=0V | - | - | 100 |
| Drain-Source On-State Resistance (RDS(ON)) | 2.5 to 3.3 m | VGS=10V,IDS=40A | - | 2.5 | 3.3 |
| Drain-Source On-State Resistance (RDS(ON)) | 3.8 to 4.6 m | VGS=4.5V,IDS=40A | - | 3.8 | 4.6 |
| Diode Characteristics | |||||
| Diode Forward Voltage (VSD) | 0.85 to 1.3 V | ISD=40A,VGS=0V | - | 0.85 | 1.3 |
| Reverse Recovery Time (trr) | 41.1 ns | ISD=40A,dISD/dt=100A/s | - | 41.1 | - |
| Reverse Recovery Charge (Qrr) | 48.2 nC | - | - | 48.2 | - |
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | 0.58 | VGS=0V,VDS=0V,F=1MHz | - | 0.58 | - |
| Input Capacitance (Ciss) | 3915 pF | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 3915 | - |
| Output Capacitance (Coss) | 1310 pF | - | - | 1310 | - |
| Reverse Transfer Capacitance (Crss) | 10.2 pF | - | - | 10.2 | - |
| Turn-on Delay Time (td(ON)) | 15.3 ns | VDD=30V,RG=4, IDS=40A,VGS=10V | - | 15.3 | - |
| Turn-on Rise Time (Tr) | 34 ns | - | - | 34 | - |
| Turn-off Delay Time (td(OFF)) | 33 ns | - | - | 33 | - |
| Turn-off Fall Time (Tf) | 9.4 ns | - | - | 9.4 | - |
| Gate Charge Characteristics | |||||
| Total Gate Charge (Qg(10V)) | 58.3 nC | VDS =48V, VGS=10V, ID=40A | - | 58.3 | - |
| Total Gate Charge (Qg(4.5V)) | 27.7 nC | - | - | 27.7 | - |
| Gate-Source Charge (Qgs) | 15.7 nC | - | - | 15.7 | - |
| Gate-Drain Charge (Qgd) | 9.7 nC | - | - | 9.7 | - |
2409302203_HUAYI-HYG025N06LS1B_C2836680.pdf
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