N Channel MOSFET HUASHUO HSU0096 Featuring Fast Switching High Pulsed Current and RoHS Compliance
Key Attributes
Model Number:
HSU0096
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
60A
RDS(on):
14mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
16pF
Number:
1 N-channel
Output Capacitance(Coss):
495pF
Pd - Power Dissipation:
73W
Input Capacitance(Ciss):
1.41nF
Gate Charge(Qg):
26nC@10V
Mfr. Part #:
HSU0096
Package:
TO-252-2L
Product Description
N-Channel Fast Switching MOSFET - HSU0096
The HSU0096 is a high-performance N-Channel Fast Switching MOSFET designed for a wide variety of applications. Leveraging SGT technology, it offers excellent Rds(on), low gate charge, and fast switching characteristics. This device is 100% EAS Guaranteed and compliant with RoHS and Halogen-Free standards.
Product Attributes
- Brand: HS-Semi
- Technology: SGT
- Compliance: RoHS and Halogen-Free
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current | 1 | 60 | A | ||
| ID@TC=100 | Continuous Drain Current | 1 | 38 | A | ||
| IDM | Pulsed Drain Current | 2 | 240 | A | ||
| EAS | Single Pulse Avalanche Energy | 3 | 90 | mJ | ||
| PD@TC=25 | Total Power Dissipation | 4 | 73 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | 1 | --- | 50 | /W | |
| RJC | Thermal Resistance Junction-Case | 1 | --- | 1.7 | /W | |
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=20A | 8.7 | 11 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=10A | 11 | 14 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=100V , VGS=0V , TJ=25 | --- | 1 | uA | |
| IDSS | Drain-Source Leakage Current | VDS=100V , VGS=0V , TJ=55 | --- | 5 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| Qg | Total Gate Charge (10V) | VDS=50V , VGS=10V , ID=20A | 26 | --- | nC | |
| Qgs | Gate-Source Charge | 4.3 | --- | nC | ||
| Qgd | Gate-Drain Charge | 6.7 | --- | nC | ||
| Td(on) | Turn-On Delay Time | VDD=50V , VGS=10V , RG=3.3, ID=20A | 7.5 | --- | ns | |
| Tr | Rise Time | 14 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 31 | --- | ns | ||
| Tf | Fall Time | 26 | --- | ns | ||
| Ciss | Input Capacitance | VDS=50V , VGS=0V , f=1MHz | 1410 | --- | pF | |
| Coss | Output Capacitance | 495 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 16 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | 1,5 VG=VD=0V , Force Current | --- | 60 | A | |
| VSD | Diode Forward Voltage | 2 VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
| trr | Reverse Recovery Time | IF=20A , di/dt=100A/s , TJ=25 | 43 | --- | nS | |
| Qrr | Reverse Recovery Charge | 35 | --- | nC | ||
Notes:
1. Tested on a 1 inch FR-4 board with 2OZ copper.
2. Tested by pulsed, pulse width 300s, duty cycle 2%.
3. EAS data shows Max. rating. Test condition: VDD=50V, VGS=10V, L=0.5mH, Rg=25.
4. Power dissipation is limited by 150 junction temperature.
5. Theoretically the same as ID and IDM, but should be limited by total power dissipation in real applications.
2411061706_HUASHUO-HSU0096_C42376811.pdf
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