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quality N channel MOSFET HUASHUO HSH200N02 featuring trench technology and full function reliability approval factory
quality N channel MOSFET HUASHUO HSH200N02 featuring trench technology and full function reliability approval factory

N channel MOSFET HUASHUO HSH200N02 featuring trench technology and full function reliability approval

Key Attributes
Model Number: HSH200N02
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+150℃
RDS(on):
33mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
129pF
Number:
1 N-channel
Output Capacitance(Coss):
343pF
Input Capacitance(Ciss):
5.082nF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
110nC@10V
Mfr. Part #:
HSH200N02
Package:
TO-263
Product Description

Product Overview

The HSH200N02 is a high-performance N-channel MOSFET featuring an advanced high cell density Trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. It is designed for power switching applications and provides excellent Cdv/dt effect decline.

Product Attributes

  • Brand: HSH-SEMI
  • Technology: Trench N-channel MOSFET
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS guaranteed, full function reliability approved

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 200 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1 70 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1 46 A
IDM Pulsed Drain Current2 252 A
EAS Single Pulse Avalanche Energy3 580 mJ
PD@TC=25 Total Power Dissipation3 200 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-ambient1 --- 60 /W
RJC Thermal Resistance Junction-Case1 --- 0.55 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 200 --- --- V
RDS(ON),typ Static Drain-Source On-Resistance2 VGS=10V , ID=30A 27 33 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 --- 4 V
IDSS Drain-Source Leakage Current VDS=160V , VGS=0V , TJ=25 --- 1 uA
IDSS Drain-Source Leakage Current VDS=160V , VGS=0V , TJ=55 --- 5 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- ±100 nA
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3
Qg Total Gate Charge (10V) VDS=100V , VGS=10V , ID=30A 110 --- nC
Qgs Gate-Source Charge 32 ---
Qgd Gate-Drain Charge 38 ---
Td(on) Turn-On Delay Time VDD=100V , VGS=10V , RG=2.5
ID=30A		 30 --- ns
Tr Rise Time 18 --- ns
Td(off) Turn-Off Delay Time 22 --- ns
Tf Fall Time 33 --- ns
Ciss Input Capacitance VDS=25V , VGS=0V , f=1MHz 5082 --- pF
Coss Output Capacitance 343 --- pF
Crss Reverse Transfer Capacitance 129 --- pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- 70 A
ISM Pulsed Source Current2,5 --- 252 A
VSD Diode Forward Voltage2 VGS=0V , IS=30A , TJ=25 --- 1.2 V
trr Reverse Recovery Time IF=30A , dI/dt=100A/s , TJ=25 --- 47 nS
Qrr Reverse Recovery Charge --- 81 nC

2410121631_HUASHUO-HSH200N02_C845626.pdf
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