Low gate charge trenched P channel MOSFET HUASHUO HSM4313 designed for synchronous buck converters
Key Attributes
Model Number:
HSM4313
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
6.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF@15V
Number:
2 P-Channel
Input Capacitance(Ciss):
1.004nF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
9nC@4.5V
Mfr. Part #:
HSM4313
Package:
SOP-8
Product Description
Product Overview
The HSM4313 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, ensuring efficient performance. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge and excellent Cdv/dt effect decline, leveraging advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: Dual P-Ch 40V Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSM4313 | Drain-Source Voltage (VDS) | -40 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID) | -VGS @ -10V, TC=25 | -6.5 | A | |||
| Continuous Drain Current (ID) | -VGS @ -10V, TC=100 | -4.7 | A | |||
| Pulsed Drain Current (IDM) | -15 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 36 | mJ | ||||
| Avalanche Current (IAS) | -27.2 | A | ||||
| Total Power Dissipation (PD) | TC=25 | 3.1 | W | |||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 85 | /W | |||
| Thermal Resistance Junction-Case (RJC) | --- | 40 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=-250uA | -40 | --- | --- | V | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-10V, ID=-6A | --- | --- | 45 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V, ID=-3A | --- | --- | 75 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID =-250uA | -1.0 | --- | -2.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=-32V, VGS=0V, TJ=25 | --- | --- | 1 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V, VDS=0V | --- | --- | 100 | nA | |
| Total Gate Charge (Qg) | VDS=-20V, VGS=-4.5V, ID=-6A | --- | 9 | --- | nC | |
| Input Capacitance (Ciss) | VDS=-15V, VGS=0V, f=1MHz | --- | 1004 | --- | pF | |
| Output Capacitance (Coss) | --- | 108 | --- | pF | ||
| Reverse Transfer Capacitance (Crss) | --- | 80 | --- | pF | ||
| Continuous Source Current (IS) | VG=VD=0V, Force Current | --- | --- | -4 | A | |
| Diode Forward Voltage (VSD) | VGS=0V, IS=-1A, TJ=25 | --- | --- | -1 | V | |
| Package | SOP-8 | |||||
| Packaging | 2500/Tape&Reel |
2410121455_HUASHUO-HSM4313_C2828487.pdf
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