Dual N Channel MOSFET HUASHUO HSM4204 Featuring RoHS Compliance and Excellent Switching Performance

Name: Dual N Channel MOSFET HUASHUO HSM4204 Featuring RoHS Compliance and Excellent Switching Performance
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: HSM4204
Availability: InStock

Key Attributes

Model Number: HSM4204

Product Custom Attributes

Drain To Source Voltage:

40V

Current - Continuous Drain(Id):

7.5A

Operating Temperature -:

-55℃~+150℃

RDS(on):

15mΩ@10V,6A

Gate Threshold Voltage (Vgs(th)):

Reverse Transfer Capacitance (Crss@Vds):

88pF@15V

Number:

2 N-Channel

Input Capacitance(Ciss):

1.314nF@15V

Pd - Power Dissipation:

1.5W

Gate Charge(Qg):

10.7nC@4.5V

Mfr. Part #:

HSM4204

Package:

SOP-8

Product Description

Product Overview

The HSM4204 is a dual N-channel MOSFET featuring high cell density trenched technology, offering excellent R_DS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It is designed for fast switching applications and provides excellent C_dv/dt effect decline.

Product Attributes

Brand: HS-Semi
Product Type: Dual N-Ch MOSFET
Certifications: RoHS, Green Product
Reliability: 100% EAS Guaranteed

Technical Specifications

General Characteristics

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	40	---	---	V
BVDSS/TJ	BVDSS Temperature Coefficient	Reference to 25 , ID=1mA	---	0.034	---	V/
RDS(ON)	Static Drain-Source On-Resistance	VGS=10V , ID=6A	---	12	15	m
RDS(ON)	Static Drain-Source On-Resistance	VGS=4.5V , ID=3A	---	17	20	m
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1.0	---	2.5	V
VGS(th)	VGS(th) Temperature Coefficient	---	---	-5.64	---	mV/
IDSS	Drain-Source Leakage Current	VDS=32V , VGS=0V , TJ=25	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=32V , VGS=0V , TJ=55	---	---	5	uA
IGSS	Gate-Source Leakage Current	VGS=20V , VDS=0V	---	---	100	nA
gfs	Forward Transconductance	VDS=5V , ID=6A	---	31	---	S
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	2.1	---
Qg	Total Gate Charge (4.5V)	VDS=20V , VGS=4.5V , ID=6A	---	10.7	---	nC
Qgs	Gate-Source Charge	---	---	3.3	---	nC
Qgd	Gate-Drain Charge	---	---	4.2	---	nC
Td(on)	Turn-On Delay Time	VDD=12V , VGS=10V , RG=3.3, ID=6A	---	8.6	---	ns
Tr	Rise Time	---	---	3.4	---	ns
Td(off)	Turn-Off Delay Time	---	---	25	---	ns
Tf	Fall Time	---	---	2.2	---	ns
Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	1314	---	pF
Coss	Output Capacitance	---	---	120	---	pF
Crss	Reverse Transfer Capacitance	---	---	88	---	pF

Diode Characteristics

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
IS	Continuous Source Current	VG=VD=0V , Force Current	---	---	7.5	A
ISM	Pulsed Source Current	---	---	---	30	A
VSD	Diode Forward Voltage	VGS=0V , IS=1A , TJ=25	---	---	1.2	V

Absolute Maximum Ratings

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	40	V
VGS	Gate-Source Voltage	20	V
ID@TA=25	Continuous Drain Current, VGS @ 10V	7.5	A
ID@TA=70	Continuous Drain Current, VGS @ 10V	6	A
IDM	Pulsed Drain Current	30	A
EAS	Single Pulse Avalanche Energy	31	mJ
IAS	Avalanche Current	25	A
PD@TA=25	Total Power Dissipation	1.5	W
TSTG	Storage Temperature Range	-55 to 150
TJ	Operating Junction Temperature Range	-55 to 150

Thermal Data

Symbol	Parameter	Typ.	Max.	Unit
RJA	Thermal Resistance Junction-ambient (Steady State)	---	85	/W
RJC	Thermal Resistance Junction-Case	---	36	/W

Ordering Information

Part Number	Package Code	Packaging
HSM4204	SOP-8	2500/Tape&Reel

Product Summary

Model	Type	Voltage	Switching
HSM4204	Dual N-Ch	40V	Fast Switching

2410121517_HUASHUO-HSM4204_C700992.pdf

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