Power Switching MOSFET HUASHUO HSL3002 N Channel Trenched Device with Low Gate Charge and High Density
Key Attributes
Model Number:
HSL3002
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
24mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
59pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
583pF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
6nC@4.5V
Mfr. Part #:
HSL3002
Package:
SOT-223
Product Description
Product Overview
The HSL3002 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and gate charge characteristics. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HSL
- Product Type: N-Ch MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 6 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 4.7 | A | |||
| IDM | Pulsed Drain Current2 | 30 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 1.5 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | 85 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 48 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.025 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=5A | --- | 24 | 28 | m |
| VGS=4.5V , ID=4A | --- | 34 | 40 | VGS | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.5 | 2.5 | V |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | --- | -4.8 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=24V , VGS=0V , TJ=55 | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=5A | --- | 7 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 2.5 | 5 | |
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=5A | --- | 6 | --- | nC |
| Qgs | Gate-Source Charge | --- | 2.2 | --- | ||
| Qgd | Gate-Drain Charge | --- | 2 | --- | ||
| td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3 , ID=5A | --- | 2.2 | --- | ns |
| tr | Rise Time | --- | 8 | --- | ||
| td(off) | Turn-Off Delay Time | --- | 22 | --- | ||
| tf | Fall Time | --- | 4 | --- | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 583 | --- | pF |
| Coss | Output Capacitance | --- | 77 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 59 | --- | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 6 | A |
| ISM | Pulsed Source Current2,5 | --- | --- | 30 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
| trr | Reverse Recovery Time | IF=5A , dI/dt=100A/s , TJ=25 | --- | 19 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 1.1 | --- | nC | |
2410121656_HUASHUO-HSL3002_C7543689.pdf
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