N Channel Enhancement Mode MOSFET HUAYI HY4504P with 250A Current and Low On Resistance Rating
Key Attributes
Model Number:
HY4504P
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
250A
RDS(on):
3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
682pF
Number:
1 N-channel
Output Capacitance(Coss):
1.863nF
Input Capacitance(Ciss):
6.985nF
Pd - Power Dissipation:
288W
Gate Charge(Qg):
195nC@10V
Mfr. Part #:
HY4504P
Package:
TO-220FB
Product Description
Product Overview
The HY4504P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers reliable and rugged performance with a high current capability of 250A and a low on-resistance of 2.3m (typ.) at VGS=10V. Devices are available in lead-free and green (RoHS compliant) options.
Product Attributes
- Brand: HY (Huayi Microelectronics)
- Origin: China
- Material: Lead Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 40 | V | |||
| VGSS | Gate-Source Voltage | ±20 | V | |||
| TJ | Maximum Junction Temperature | 175 | °C | |||
| TSTG | Storage Temperature Range | -55 | 175 | °C | ||
| IS | Diode Continuous Forward Current | TC=25°C, Mounted on Large Heat Sink | 250 | A | ||
| IDM | Pulsed Drain Current | TC=25°C | 250* | A | ||
| ID | Continuous Drain Current | TC=25°C | 250 | A | ||
| ID | Continuous Drain Current | TC=100°C | 162 | A | ||
| PD | Maximum Power Dissipation | TC=25°C | 288 | W | ||
| PD | Maximum Power Dissipation | TC=100°C | 144 | W | ||
| RθJC | Thermal Resistance-Junction to Case | 0.52 | °C/W | |||
| RθJA | Thermal Resistance-Junction to Ambient | 62.5 | °C/W | |||
| EAS | Avalanche Energy, Single Pulsed | L=0.5mH | 805** | mJ | ||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250µA | 40 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=40V, VGS=0V | 1 | µA | ||
| IDSS | Zero Gate Voltage Drain Current | TJ=85°C | 10 | µA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250µA | 2.0 | 3.0 | 4.0 | V |
| IGSS | Gate Leakage Current | VGS=±20V, VDS=0V | ±100 | nA | ||
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, IDS=125A | 2.3*** | mΩ | ||
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | ISD=125A, VGS=0V | 0.8 | 1.2 | V | |
| trr | Reverse Recovery Time | 38 | ns | |||
| Qrr | Reverse Recovery Charge | ISD=125A, dISD/dt=100A/µs | 62 | nC | ||
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | 1.0 | Ω | ||
| Ciss | Input Capacitance | 6985 | pF | |||
| Coss | Output Capacitance | 1863 | pF | |||
| Crss | Reverse Transfer Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | 682 | pF | ||
| td(ON) | Turn-on Delay Time | VDD=20V, RG=6 Ω, IDS =125A, VGS=10V, | 35 | ns | ||
| tr | Turn-on Rise Time | 62 | ns | |||
| td(OFF) | Turn-off Delay Time | 45 | ns | |||
| tf | Turn-off Fall Time | ns | ||||
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS=32V, VGS=10V, IDS=125A | 195 | nC | ||
| Qgs | Gate-Source Charge | 30 | nC | |||
| Qgd | Gate-Drain Charge | 80 | nC | |||
* Drain current is limited by junction temperature
** Note: EAS rating is tested with L=0.5mH
*** RDS(ON) is limited by package
2410121812_HUAYI-HY4504P_C358120.pdf
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