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quality fast switching N channel MOSFET HUASHUO HSU90N02 with super low gate charge and high cell density design factory
quality fast switching N channel MOSFET HUASHUO HSU90N02 with super low gate charge and high cell density design factory

fast switching N channel MOSFET HUASHUO HSU90N02 with super low gate charge and high cell density design

Key Attributes
Model Number: HSU90N02
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.7mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.1V
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
82W
Gate Charge(Qg):
50nC@4.5V
Mfr. Part #:
HSU90N02
Package:
TO-252-2
Product Description

Product Overview

The HSU90N02 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, suitability for battery protection, and power management.

Product Attributes

  • Brand: HS-Semi
  • Product Type: N-Channel Fast Switching MOSFET
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage 12 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1 90 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1 59 A
IDM Pulsed Drain Current2 350 A
EAS Single Pulse Avalanche Energy3 108 mJ
PD@TC=25 Total Power Dissipation4 82 W
TSTG Storage Temperature Range -55 175
TJ Operating Junction Temperature Range -55 175
RJA Thermal Resistance Junction-ambient (Steady State)1 --- 50 /W
RJA Thermal Resistance Junction-Ambient 1 (t 10s) --- 25 /W
RJC Thermal Resistance Junction-Case1 --- 1.92 /W
VDS 20 V
RDS(ON),typ ID=90 A 2.7 m
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 20 --- --- V
BVDSS/TJ BVDSS Temperature Coefficient Reference to 25 , ID=1mA 0.028 --- V/
RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V , ID=30A 2.7 4 m
RDS(ON) Static Drain-Source On-Resistance2 VGS=2.5V , ID=20A 4.1 6 V
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.4 0.7 1.1 V
VGS(th) VGS(th) Temperature Coefficient -6.16 --- mV/
IDSS Drain-Source Leakage Current VDS=20V , VGS=0V , TJ=25 --- 1 uA
IDSS Drain-Source Leakage Current VDS=20V , VGS=0V , TJ=55 --- 5
IGSS Gate-Source Leakage Current VGS=12V , VDS=0V --- 100 nA
Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=18A 50 --- nC
Qgs Gate-Source Charge 3.9 ---
Qgd Gate-Drain Charge 22 ---
Td(on) Turn-On Delay Time VDD=15V , VGS=4.5V , RG=1.8 , ID=15A 10 --- ns
Tr Rise Time 33 ---
Td(off) Turn-Off Delay Time 68 ---
Tf Fall Time 52 ---
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz 3200 --- pF
Coss Output Capacitance 430 ---
Crss Reverse Transfer Capacitance 414 ---
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- 90 A
ISM Pulsed Source Current2,5 --- 360 A
VSD Diode Forward Voltage2 VGS=0V , IS=30A , TJ=25 --- 1.2 V
trr Reverse Recovery Time IF=30A , dI/dt=100A/s , TJ=25 --- 24 nS
Qrr Reverse Recovery Charge --- 12 nC

Notes:
1: Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2: Tested by pulsed, pulse width 300s, duty cycle 2%.
3: EAS data shows Max. rating. Test condition: VDD=15V, VGS=4.5V, L=0.5mH, IAS=22A.
4: Power dissipation limited by 175 junction temperature.
5: Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.

Ordering Information:

Part Number Package Code Packaging
HSU90N02 TO252-2 2500/Tape&Reel

2410121656_HUASHUO-HSU90N02_C845613.pdf
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