Fast Switching N Channel MOSFET HUASHUO HSH4070 Featuring Advanced Trench Technology for Performance
Key Attributes
Model Number:
HSH4070
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
170A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.2mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
112pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
3.872nF@20V
Pd - Power Dissipation:
178W
Gate Charge(Qg):
68nC@10V
Mfr. Part #:
HSH4070
Package:
TO-263
Product Description
Product Overview
The HSH4070 is an N-Channel Fast Switching MOSFET designed for high-current applications. Featuring advanced trench technology, it offers low gate charge and high current capability, making it suitable for synchronous rectification in SMPS, DC/DC converters, and Or-ing applications. This RoHS and Halogen-Free compliant component is 100% UIS Tested for reliability.
Product Attributes
- Brand: HSH
- Type: N-Channel MOSFET
- Switching Speed: Fast
- Certifications: RoHS and Halogen-Free Compliant
- Testing: 100% UIS Tested
- Technology: Advanced Trench Technology
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VDS (Drain-Source Voltage) | 40 | V | |||
| VGS (Gate-Source Voltage) | ±20 | V | |||
| ID@TC=25 (Continuous Drain Current, VGS @ 10V) | 170 | A | |||
| ID@TC=100 (Continuous Drain Current, VGS @ 10V) | 142 | A | |||
| IDM (Pulsed Drain Current) | 400 | A | |||
| EAS (Single Pulse Avalanche Energy) | 462 | mJ | |||
| IAS (Avalanche Current) | 43 | A | |||
| PD@TC=25 (Total Power Dissipation) | 178 | W | |||
| TSTG (Storage Temperature Range) | -55 | 150 | |||
| TJ (Operating Junction Temperature Range) | -55 | 150 | |||
| Thermal Data | |||||
| RJA (Thermal Resistance Junction-Ambient) | --- | 50 | /W | ||
| RJC (Thermal Resistance Junction-Case) | --- | 0.7 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | |||||
| BVDSS (Drain-Source Breakdown Voltage) | VGS=0V , ID=250uA | 40 | --- | --- | V |
| RDS(ON) (Static Drain-Source On-Resistance) | VGS=10V , ID=20A | 2.2 | 2.6 | m | |
| RDS(ON) (Static Drain-Source On-Resistance) | VGS=4.5V , ID=20A | 2.8 | 3.6 | m | |
| VGS(th) (Gate Threshold Voltage) | VGS=VDS , ID =250uA | 1.2 | 1.6 | 2.2 | V |
| IDSS (Drain-Source Leakage Current) | VDS=32V , VGS=0V , TJ=25 | --- | 1 | uA | |
| IDSS (Drain-Source Leakage Current) | VDS=32V , VGS=0V , TJ=55 | --- | 5 | uA | |
| IGSS (Gate-Source Leakage Current) | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs (Forward Transconductance) | VDS=5V , ID=20A | 53 | --- | S | |
| Rg (Gate Resistance) | VDS=0V , VGS=0V , f=1MHz | 1.9 | --- | ||
| Qg (Total Gate Charge) | VDS=15V , VGS=10V , ID=20A | 68 | --- | nC | |
| Qgs (Gate-Source Charge) | 10.3 | --- | nC | ||
| Qgd (Gate-Drain Charge) | 14.5 | --- | nC | ||
| Td(on) (Turn-On Delay Time) | VDD=15V , VGS=10V , RG=3.3, ID=20A | 11.5 | --- | ns | |
| Tr (Rise Time) | 40.3 | --- | ns | ||
| Td(off) (Turn-Off Delay Time) | 44.5 | --- | ns | ||
| Tf (Fall Time) | 26.4 | --- | ns | ||
| Ciss (Input Capacitance) | VDS=20V , VGS=0V , f=1MHz | 3872 | --- | pF | |
| Coss (Output Capacitance) | 1219 | --- | pF | ||
| Crss (Reverse Transfer Capacitance) | 112 | --- | pF | ||
| Diode Characteristics | |||||
| IS (Continuous Source Current) | VG=VD=0V , Force Current | --- | 130 | A | |
| VSD (Diode Forward Voltage) | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
Notes:
1. Tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. Tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. EAS data shows Max. rating. Test condition: VDD=25V, VGS=10V, L=0.5mH, IAS=43A.
4. Power dissipation is limited by 150 junction temperature.
5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
6. Package limitation current is 210A.
2410121655_HUASHUO-HSH4070_C5341705.pdf
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