N Channel Enhancement Mode MOSFET HUAYI HY1908B 80V 90A Low RDS ON 7m Typical Power Management Device
Key Attributes
Model Number:
HY1908B
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+175℃
RDS(on):
9mΩ@10V,45A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
250pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.8nF
Output Capacitance(Coss):
389pF
Pd - Power Dissipation:
185W
Gate Charge(Qg):
-
Mfr. Part #:
HY1908B
Package:
TO-263-2L
Product Description
Product Overview
The HY1908P/M/B/MF/PS/PM is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with features such as 80V/90A rating, low RDS(ON) of 7m(typ.)@VGS = 10V, 100% avalanche tested, and reliability. Lead-free devices are available, complying with RoHS standards.
Product Attributes
- Brand: HOOYI
- Origin: China
- Material: Lead-Free Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020
Technical Specifications
| Model | Package | VDSS (V) | ID (A) @ Tc=25C | RDS(ON) (m) @ VGS=10V, IDS=45A | EAS (mJ) @ L=0.5mH | PD (W) @ Tc=25C |
| HY1908P | TO-220FB-3L | 80 | 90 | 7 (typ.) | 416 (typ.) | 185 |
| HY1908M | TO-220FB-3S | 80 | 90 | 7 (typ.) | 416 (typ.) | 185 |
| HY1908B | TO-263-2L | 80 | 90 | 7 (typ.) | 416 (typ.) | 185 |
| HY1908MF | TO-220MF-3L | 80 | 90 | 7 (typ.) | 416 (typ.) | 185 |
| HY1908PS | TO-3PS-3L | 80 | 90 | 7 (typ.) | 416 (typ.) | 185 |
| HY1908PM | TO-3PM-3S | 80 | 90 | 7 (typ.) | 416 (typ.) | 185 |
2410121243_HUAYI-HY1908B_C138336.pdf
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